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PDF FDS5170N7 Data sheet ( Hoja de datos )
| Número de pieza | FDS5170N7 | |
| Descripción | 60V N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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May 2003
FDS5170N7
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V
RDS(ON) = 15 mΩ @ VGS = 6.0 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching, low gate charge (51nC typical)
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS5170N7
FDS5170N7
13’’
Ratings
60
± 20
10.6
50
3.0
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDS5170N7 Rev C1(W)
1 page  
Typical Characteristics
10
ID = 10.6A
8
6
VDS = 20V
40V
30V
4
2
0
0 10 20 30 40 50 60
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 85oC/W
TA = 25oC
0.01
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
4000
3200
CISS
f = 1MHz
VGS = 0 V
2400
1600
COSS
800
CRSS
0
0
10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.01
0.1
SINGLE PULSE
RθJA = 85°C/W
TA = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA = 85 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
FDS5170N7 Rev C1(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS5170N7.PDF ] | |
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