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Datasheet CPC3710 PDF ( 特性, スペック, ピン接続図 )

部品番号 CPC3710
部品説明 250V N-Channel Depletion-Mode FET
メーカ IXYS
ロゴ IXYS ロゴ 
プレビュー
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CPC3710 Datasheet, CPC3710 PDF,ピン配置, 機能
INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
250VP
RDS(on)
(max)
10
IDSS (min)
220mA
Package
SOT-89
Features
Low RDS(on) at Cold Temperatures
Low On-Resistance: 10max. at 25ºC
High Input Impedance
High Breakdown Voltage: 250VP
Low VGS(off) Voltage: -1.6 to -3.9V
Small Package Size SOT-89
Applications
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Package Pinout
G
D
S
D
(SOT-89)
CPC3710
250V N-Channel
Depletion-Mode FET
Description
The CPC3710 is an N-channel, depletion-mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high-power applications. The
CPC3710 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3710 offers a low, 10maximum, on-state
resistance at 25ºC.
The CPC3710 has a minimum breakdown voltage
of 250VP , and is available in an SOT-89 package.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown.
Ordering Information
Part #
CPC3710CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
DS-CPC3710-R02
www.ixysic.com
1

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CPC3710 pdf, ピン配列
INTEGRATED CIRCUITS DIVISION
CPC3710
300
270
240
210
180
150
120
90
60
30
0
0
Output Characteristics
(TA=25ºC)
VGS=0.0V
V =-1.0V
GS
VGS=-1.5V
VGS=-2.0V
123456
VDS (V)
PERFORMANCE DATA*
350
300
250
200
150
100
50
0
-3.0
Transfer Characteristics
(VDS=5V)
+25ºC
+125ºC
-40ºC
-2.5 -2.0 -1.5
VGS (V)
-1.0
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-40
VGS(off) vs. Temperature
(VDS=10V, ID=1mA)
-0 40 80
Temperature (ºC)
120
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0
-40
RON vs. Temperature
(VGS=0V, ID=100mA)
-0 40 80
Temperature (ºC)
Power Dissipation
vs. Ambient Temperature
1.6
1.4
1.2
1.0
0.8
Transconductance Vs. Drain Current
(VDS=10V)
300
-55ºC
250
+25ºC
200
+125ºC
150
0.6 100
0.4
50
0.2
0.0
120 0 20 40 60 80 100 120 140
Ambient Temperature (ºC)
0
0 10 20 30 40 50 60 70 80 90 100
ID (mA)
Max Rated Safe Operating Area
1
0.1
0.01
0.001
0.1
1 10 100
Drain-Source Voltage (V)
1000
Capacitance vs. Drain Source Voltage
(VGS=-5V)
160
140
120
100
CISS
80
60
40
20
CRSS
0
0
10
20
VDS (V)
COSS
30 40
On-Resistance vs. Drain Current
(VGS=0V)
20
18
16
14
12
10
8
6
4
2
0
0 0.06 0.12 0.18 0.24 0.3
ID (A)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R02 www.ixysic.com
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