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Datasheet CPC3701 PDF ( 特性, スペック, ピン接続図 )

部品番号 CPC3701
部品説明 N-Channel Vertical DMOS FET
メーカ IXYS
ロゴ IXYS ロゴ 
プレビュー
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CPC3701 Datasheet, CPC3701 PDF,ピン配置, 機能
INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
60V
RDS(on)
(max)
1
IDSS (min)
600mA
Package
SOT-89
Features
Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
Low On-Resistance: 1max. at 25ºC
High Input Impedance
Low VGS(off) Voltage: -1.4 to -3.1V
Small Package Size SOT-89
Applications
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Security
Power Supplies
CPC3701
60V, Depletion-Mode, N-Channel
Vertical DMOS FET
Description
The CPC3701 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high-power applications. The
CPC3701 is a highly reliable FET device that has
been used extensively in our Solid State Relays for
industrial and security applications.
The CPC3701 has a minimum breakdown voltage of
60V, and is available in the SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3701CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Package Pinout (SOT-89)
G
D
S
D
Circuit Symbol
G
D
S
DS-CPC3701-R06
www.ixysic.com
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CPC3701 pdf, ピン配列
INTEGRATED CIRCUITS DIVISION
CPC3701
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
PERFORMANCE DATA* @ 25ºC (Unless Otherwise Noted)
Output Characteristics
VGS=0V
VGS=-0.5V
VGS=-1V
VGS=-1.5V
VGS=-2V
VGS=-2.5V
VGS=-3V
0.5 1.0 1.5 2.0 2.5
VDS (V)
Threshold Voltage vs. Temperature
-2.05
(IDS=1PA)
-2.10
-2.15
-2.20
-2.25
-2.30
-2.35
-2.40
-40 -20
0 20 40 60
Temperature (ºC)
80 100
Forward Safe Operating Bias
(VGS=0V)
1
0.1
0.01
0.01
0.1 1
Voltage (V)
10
100
Power Dissipation vs. Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140
Temperature (ºC)
Capacitance vs. Drain-Source Voltage
(VGS=-5V)
500
400
CISS
300
200
100
0
0
COSS
10 20 30 40 50
VDS (V)
Leakage Current (IDS) vs. Temperature
(VGS=-5V, VDS=60V)
120
100
80
60
40
20
0
-40 -20
0 20 40 60
Temperature (ºC)
80 100
Breakdown Voltage (VDS) vs. Temperature
(VGS=-5V, IDS=10PA)
82
80
78
76
74
72
-40 -20
0 20 40 60
Temperature (ºC)
80 100
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R06 www.ixysic.com
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