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PDF AON7788 Data sheet ( Hoja de datos )
| Número de pieza | AON7788 | |
| Descripción | 30V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON7788
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON7788 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
40A
< 4.5mΩ
< 5.3mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3_EP
Top View
Bottom View
Pin 1
Top View
18
27
36
4 5G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
40
31
150
20
16
35
61
36
14
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
2.8
Max
40
75
3.4
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Jan 2011
www.aosmd.com
Page 1 of 7
1 page  
AON7788
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
TA=25°C
100
TA=150°C
TA=100°C
TA=125°C
10
1
10 100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
50 10000
40 TA=25°C
1000
30 17
5
100 2
20 10
10 10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=75°C/W
1
0.00001
0
0.001
Pu0l.s1e Width (s) 1018
1000
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
PD
Single Pulse
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0 : Jan 2011
www.aosmd.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AON7788.PDF ] | |
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