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Datasheet AON7788 PDF ( 特性, スペック, ピン接続図 )

部品番号 AON7788
部品説明 30V N-Channel MOSFET
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 
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AON7788 Datasheet, AON7788 PDF,ピン配置, 機能
AON7788
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON7788 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
40A
< 4.5m
< 5.3m
100% UIS Tested
100% Rg Tested
DFN 3x3_EP
Top View
Bottom View
Pin 1
Top View
18
27
36
4 5G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
40
31
150
20
16
35
61
36
14
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
2.8
Max
40
75
3.4
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Jan 2011
www.aosmd.com
Page 1 of 7

1 Page



AON7788 pdf, ピン配列
AON7788
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80 10V
4.5V
60
3V
40
20
VGS=2.5V
100
VDS=5V
80
60
40
20
125°C
25°C
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
0
1.5 2.0 2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
3.0
5.0
4.5
VGS=4.5V
4.0
VGS=10V
3.5
3.0
0
5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
2
1.8
VGS=10V
1.6 ID=20A
17
1.4 5
1.2
VGS=4.5V
ID=20A
2
10
1
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Tem1p8erature
(Note E)
10
ID=20A
8
6 125°C
4
25°C
2
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0 : Jan 2011
www.aosmd.com
Page 3 of 7


3Pages


AON7788 電子部品, 半導体
AON7788
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=30V
VDS=15V
1.0E-05
1.0E-06
0 50 100 150 200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
25
di/dt=800A/µs
20
125ºC
15 Qrr
25ºC
10
5 Irm
125ºC
25ºC
12
10
8
6
4
2
00
0 5 10 15 20 25 30
IS (A)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
25
Is=20A
20
125ºC
10
8
15
10 Qrr
25ºC
125ºC
6
4
5 Irm
25ºC
2
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20A
10A
5A
IS=1A
25 50 75 100 125 150 175 200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
12
di/dt=800A/µs
10
8 trr
125ºC
25ºC
4
3.5
3
2.5
62
4S
2
125ºC
25ºC
1.5
1
0.5
00
0 5 10 15 20 25 30
IS (A)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
18
15
12
9
6
3
0
0
trr 125ºC
25ºC
S
200
25ºC
125ºC
400 600
5
Is=20A
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
800 1000
di/dt (A/µs)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 0 : Jan 2011
www.aosmd.com
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