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Datasheet IRF830 PDF ( 特性, スペック, ピン接続図 )

部品番号 IRF830
部品説明 Power Field Effect Transistor
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 
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IRF830 Datasheet, IRF830 PDF,ピン配置, 機能
IRF830
Power Field Effect
Transistor
NChannel Enhancement Mode
Silicon Gate TMOS
This TMOS Power FET is designed for high voltage, high speed
power switching applications such as switching regulators, converters,
solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds
Low RDS(on) to Minimize OnLosses, Specified at Elevated
Temperature
Rugged — SOA is Power Dissipation Limited
SourcetoDrain Diode Characterized for Use with Inductive Loads
MAXIMUM RATINGS
Rating
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 MΩ)
GateSource Voltage
Drain Current
Continuous, TC = 25°C
Continuous, TC = 100°C
Peak, TC = 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
— JunctiontoCase
— JunctiontoAmbient
Maximum Lead Temperature for
Soldering Purposes, 1/8from Case
for 5 Seconds
Symbol
VDSS
VDGR
VGS
ID
PD
TJ, Tstg
Value
500
500
"20
4.5
3.0
18
75
0.6
55 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
RθJC
RθJA
TL
°C/W
1.67
62.5
300 °C
http://onsemi.com
TMOS POWER FET
4.5 AMPERES, 500 VOLTS
RDS(on) = 1.5 Ω
NChannel
D
®G
S
4
12 3
TO220AB
CASE 221A
STYLE 5
PIN ASSIGNMENT
1 Gate
2 Drain
3 Source
4 Drain
See the MTM4N45 Data Sheet for a complete set of design curves for the
product on this data sheet. Design curves of the MTP4N45 are applicable for
this product.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
ORDERING INFORMATION
Device
Package
Shipping
IRF830
TO220AB
50 Units/Rail
Publication Order Number:
IRF830/D

1 Page



IRF830 pdf, ピン配列
Q
H
Z
4
1 23
A
K
L
V
G
N
D
IRF830
PACKAGE DIMENSIONS
TO220AB
CASE 221A09
ISSUE Z
T
SEATING
PLANE
C
TS
U
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 −−−
Z −−− 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 −−−
−−− 2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
EFET is a trademark of Semiconductor Components Industries, LLC.
TMOS is a registered trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81357733850
http://onsemi.com
3
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
IRF830/D


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