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IRF830 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IRF830
部品説明 Power Field Effect Transistor
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 

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IRF830 Datasheet, IRF830 PDF,ピン配置, 機能
IRF830
Power Field Effect
Transistor
NChannel Enhancement Mode
Silicon Gate TMOS
This TMOS Power FET is designed for high voltage, high speed
power switching applications such as switching regulators, converters,
solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds
Low RDS(on) to Minimize OnLosses, Specified at Elevated
Temperature
Rugged — SOA is Power Dissipation Limited
SourcetoDrain Diode Characterized for Use with Inductive Loads
MAXIMUM RATINGS
Rating
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 MΩ)
GateSource Voltage
Drain Current
Continuous, TC = 25°C
Continuous, TC = 100°C
Peak, TC = 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
— JunctiontoCase
— JunctiontoAmbient
Maximum Lead Temperature for
Soldering Purposes, 1/8from Case
for 5 Seconds
Symbol
VDSS
VDGR
VGS
ID
PD
TJ, Tstg
Value
500
500
"20
4.5
3.0
18
75
0.6
55 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
RθJC
RθJA
TL
°C/W
1.67
62.5
300 °C
http://onsemi.com
TMOS POWER FET
4.5 AMPERES, 500 VOLTS
RDS(on) = 1.5 Ω
NChannel
D
®G
S
4
12 3
TO220AB
CASE 221A
STYLE 5
PIN ASSIGNMENT
1 Gate
2 Drain
3 Source
4 Drain
See the MTM4N45 Data Sheet for a complete set of design curves for the
product on this data sheet. Design curves of the MTP4N45 are applicable for
this product.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
ORDERING INFORMATION
Device
Package
Shipping
IRF830
TO220AB
50 Units/Rail
Publication Order Number:
IRF830/D

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