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Datasheet ELM7327xxxA PDF ( 特性, スペック, ピン接続図 )

部品番号 ELM7327xxxA
部品説明 CMOS Voltage detector
メーカ ELM
ロゴ ELM ロゴ 
プレビュー
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ELM7327xxxA Datasheet, ELM7327xxxA PDF,ピン配置, 機能
ELM73xxxxxA CMOS Voltage detector with delay circuit and Manual Reset function
■General description
ELM73xxxxxA is CMOS voltage detector IC with delay function; delay time is adjustable by external
capacitor. It operates with very low current consumption; 260nA(typ.). The type with Manual Reset function
is also available in ELM73xxxBxA series; reset condition can be manually asserted at any time. There are two
output forms available; N-ch opendrain and CMOS output. The output logic is positive, therefore, the output
becomes low level when VDD is lower than detection voltage. The standard detection voltages are 2.2V, 2.7V,
3.0V and 4.0V; ELM73 series can also be made as semi-custom IC within the range of 1.4~5.0V by 0.1V step.
■Features
• Detection voltage range
: 1.4V to 5.0V (by 0.1V step)
• Low power operation
: Typ.260nA(Vdd=VdetN+1V)
• Accuracy of detection voltage : ±30mV (VdetN<2.5V)
±1.2% (VdetN≥2.5V)
• Accuracy of delay time
: Typ.15% (ExtC=4.7nF)
• Hysteresis voltage
: Typ.VdetN×1.04
• Manual reset input
: MR pin (ELM73xxxBxA only, Built-in pull-up resistor)
• Package
: SC-82AB(SOT-343), SC-70-5(SOT-353), SOT-25
■Application
• Reset for microcomputers
• Voltage power shortage detectors
• Switch of back up power source
• Battery checkers
■Maximum absolute ratings
Parameter
Power supply voltage
Symbol
Vdd
Apply voltage to OUT pin
Vout
Apply voltage to ExtC pin
Apply voltage to MR pin
Output current
VExtC
Vmr
Iout
Power dissipation
Pd
Operating temperature
Storage temperature
Top
Tstg
Limit
Vss-0.3 to 7.0
N-ch : Vss-0.3 to 7.0
CMOS : Vss-0.3 to Vdd+0.3
Vss-0.3 to Vdd+0.3
Vss-0.3 to Vdd+0.3
100
250 (SOT-25)
150 (SC-82AB (SOT-343))
150 (SC-70-5 (SOT-353))
-40 to +85
-55 to +125
Unit
V
V
V
V
mA
mW
°C
°C
16 - 1
Rev.1.1

1 Page



ELM7327xxxA pdf, ピン配列
ELM73xxxxxA CMOS Voltage detector with delay circuit and Manual Reset function
■Standard circuit
• ELM73xxNAxA
• ELM73xxCAxA
VDD
OUT
ExtC
VSS
• ELM73xxNBxA
100k
VDVDD
OUOTUT
CeVx SVSSS ExEtxCtC
10100k0k VDD
OUT
ExtC
CeCxex VSS
VDD
VDVDD
OUOTUT
CeVx SVSSS ExEtxCtC
CeCxex
Vref +
-
• ELM73xxCBxA
Delay
circuit
OUT
VDD
VDD
100k
VDVDD
OUT
OUOTUT
MR MMRR
ExtC
VSS
CeVx SVSSS ExEtxCtC
10100k0k VDD
MR VSS
OUT
CeCxeVx DDVSS ExtC
VDVDD
OUOTUT
MMRR
CeVx SVSSS ExEtxCtC
VDD
Vref +
Delay
Vref +
Delay
OUT
- circuit
* If delay function is not required, Cex is not necessary.
-
Vref +
-
circuit
Delay
circuit
■Block diagram
VESSLM73xxNAxA
VDD
VDD
Vref
Vref
+
-
+
-
Delay
circuit
Delay
circuit
ExtC
OUT
OUT
VSS
• ELM73xxCAxA
VSS
VDD
VDD
Vref
Vref
+
-
+
-
Delay
circuit
Delay
circuit
ExtC
CeCxex
OUT
OUT
ExtC
ExtC
OOUUTT
VSS
VSS
VDEDLM73xxNBxA
VDD
Vref
Vref
+
-
+
-
Delay
circuit
Delay
circuit
VSS
VSS
VDD
VDD
Vref
Vref
+
+-
-
Delay
Dceirlcauyit
circuit
ExtC
ExtC
OUT
OUT
VSS
VVDSEDSLM73xxCBxA
VDD
Vref
Vref
+
+-
-
Delay
circuit
Delay
circuit
EMxtRC
ExtC
VSS
VSS
VDD
OUT
16 - 3
OUT
MMRR
Vref +
-
Delay
circuit
EMxRtC
ExtC
OUT
OUT
MR
MR
ExtC
ExtC
ROUevT.1.1
MR


3Pages


ELM7327xxxA 電子部品, 半導体
ELM73xxxxxA CMOS Voltage detector with delay circuit and Manual Reset function
ELM7330xxxA
Top=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note*1
Detection voltage
VdetN
2.964 3.000 3.036 V
1
Hysteresis width
Vhys
VdetN× VdetN× VdetN×
0.02 0.06 0.08
V
1
Current consumption
Iss Vdd=4.0V
0.26 0.80 μA
2
Power voltage
Vdd
0.8 6.0 V 1
Output current
IoutN1 Vdd=0.8V, Vds=0.4V
IoutN2 Vdd=1.0V, Vds=0.4V
0.01 0.50
0.50 2.50
mA 3-(1)
IoutP*2 Vdd=4.5V, Vds=0.4V
0.80 2.30
mA 3-(2)
Leakage current
Ileak Vdd=VLX=6.0V
0.1 μA 4
Delay time
tPLH Vdd=1.0V to 4.0V, Cex=4.7nF 22.1 26.0*3 29.9
tPHL Vdd=4.0V to 1.0V
30
ms
μs
5
MR voltage High
VmrH Vdd=6.0V
1.2 V 6
MR voltage Low
VmrL Vdd=3.5V
0.3
6
MR pull-up resistance Rmr Vdd=4.0V
1 3 6 MΩ 7
Temperature
ΔVdetN
characteristic of VdetN ΔTop
±30 ppm/°C
* 1. Note: test circuit No.,
2. IoutP is only applied to CMOS output products.
3. tPLH(typ.) is derived by using Cex from the following formula: tPLH(typ.)[ms]=5.532×Cex[nF].
ELM7340xxxA
Top=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note*1
Detection voltage
VdetN
3.952 4.000 4.048 V
1
Hysteresis width
Vhys
VdetN× VdetN× VdetN×
0.02 0.06 0.08
V
1
Current consumption
Iss Vdd=5.0V
0.26 0.80 μA
2
Power voltage
Vdd
0.8 6.0 V 1
Output current
IoutN1 Vdd=0.8V, Vds=0.4V
IoutN2 Vdd=1.0V, Vds=0.4V
0.01 0.50
0.50 2.50
mA 3-(1)
IoutP*2 Vdd=4.5V, Vds=0.4V
0.80 2.30
mA 3-(2)
Leakage current
Ileak Vdd=VLX=6.0V
0.1 μA 4
Delay time
tPLH Vdd=1.0V to 5.0V, Cex=4.7nF 22.1 26.0*3 29.9
tPHL Vdd=5.0V to 1.0V
30
ms
μs
5
MR voltage High
VmrH Vdd=6.0V
1.2 V 6
MR voltage Low
VmrL Vdd=4.5V
0.3
6
MR pull-up resistance Rmr Vdd=5.0V
1 3 6 MΩ 7
Temperature
ΔVdetN
characteristic of VdetN ΔTop
±30 ppm/°C
* 1. Note: test circuit No.,
2. IoutP is only applied to CMOS output products.
3. tPLH(typ.) is derived by using Cex from the following formula: tPLH(typ.)[ms]=5.532×Cex[nF].
16 - 6
Rev.1.1

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