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Datasheet FSS264 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FSS264 | N-Channel Silicon MOSFET Ordering number : ENA0267
FSS264
FSS264
Features
• Low ON-resistance. • 4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curr |  Sanyo | mosfet |
FSS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FSS101 | Load S/W Applications Sanyo Semicon Device data | | |
| 2 | FSS104 | DC/DC Converter Applications Ordering number:ENN5991A
P-Channel Silicon MOSFET
FSS104
DC/DC Converter Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive.
Package Dimensions
unit:mm 2116
[FSS104]
8 5
0.3 4.4 6.0
5.0
1.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain- Sanyo Semicon Device converter | | |
| 3 | FSS106 | DC/DC Converter Applications Sanyo Semicon Device converter | | |
| 4 | FSS107 | Load Switching Applications Sanyo Semicon Device data | | |
| 5 | FSS130D | 11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs FSS130D, FSS130R
June 1998
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFE  Intersil Corporation mosfet | | |
| 6 | FSS130D1 | 11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs FSS130D, FSS130R
June 1998
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFE Intersil Corporation mosfet | | |
| 7 | FSS130D3 | 11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs FSS130D, FSS130R
June 1998
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFE Intersil Corporation mosfet | |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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