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GA10JT12-CAL データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 GA10JT12-CAL
部品説明 Normally - OFF Silicon Carbide Junction Transistor
メーカ GeneSiC
ロゴ GeneSiC ロゴ 
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GA10JT12-CAL Datasheet, GA10JT12-CAL PDF,ピン配置, 機能
GA10JT12-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
250 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
1200 V
120 mΩ
25 A
80
D
G
S
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1 
Section II: Static Electrical Characteristics................................................................................................... 2 
Section III: Dynamic Electrical Characteristics ............................................................................................ 2 
Section IV: Figures .......................................................................................................................................... 3 
Section V: GA10JT12-CAL Gate Drive Theory of Operation ....................................................................... 5 
Section VI: Mechanical Parameters ............................................................................................................... 6 
Section VII: Chip Dimensions......................................................................................................................... 6 
Section VIII: SPICE Model Parameters .......................................................................................................... 8 
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 155°C
Conditions
TVJ = 250 oC,
Clamped Inductive Load
TVJ = 250 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 155 °C, tp > 100 ms
Value
1200
25
10
1.3
ID,max = 10
@ VDS VDSmax
>20
30
25
170 / 22
-55 to 250
Unit Notes
V
A
A
A
A
µs
V
V
W
°C
Sept 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 7

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GA10JT12-CAL pdf, ピン配列
Section IV: Figures
GA10JT12-CAL
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 125 °C
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: Drain-Source Voltage vs. Gate Current
Figure 5: DC Current Gain and Normalized On-Resistance
vs. Temperature
Figure 6: DC Current Gain vs. Drain Current
Sept 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg3 of 7


3Pages


GA10JT12-CAL 電子部品, 半導体
Section VI: Mechanical Parameters
Raster Size
Area total / active
Thickness
Wafer Size
Flat Position
Passivation frontside
Pad Metal (Anode)
Backside Metal (Cathode)
Die Bond
Wire Bond
Reject ink dot size
Recommended storage environment
Section VII: Chip Dimensions
GA10JT12-CAL
2.10 x 2.10
mm2
83 x 83
mil2
4.41/3.31
mm2
6836/5134
mil2
360 µm 14 mil
100 mm 3937 mil
0 deg 0 deg
Polyimide
4000 nm Al
400 nm Ni + 200 nm Au -system
Electrically conductive glue or solder
Al 10 mil (Source)
Al 3 mil (Gate)
Φ ≥ 0.3 mm
Store in original container, in dry nitrogen,
< 6 months at an ambient temperature of 23 °C
DIE
SOURCE
WIREBONDABLE
GATE
WIREBONDABLE
A
B
C
D
E
F
G
H
mm mil
2.10 83
2.10 83
1.47 58
1.52 60
0.17 7
0.40 16
0.30 12
0.30 12
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Sept 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg6 of 7

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