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GA10JT12-CAL PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 GA10JT12-CAL
部品説明 Normally - OFF Silicon Carbide Junction Transistor
メーカ GeneSiC
ロゴ GeneSiC ロゴ 

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GA10JT12-CAL Datasheet, GA10JT12-CAL PDF,ピン配置, 機能
GA10JT12-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
250 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
1200 V
120 mΩ
25 A
80
D
G
S
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1 
Section II: Static Electrical Characteristics................................................................................................... 2 
Section III: Dynamic Electrical Characteristics ............................................................................................ 2 
Section IV: Figures .......................................................................................................................................... 3 
Section V: GA10JT12-CAL Gate Drive Theory of Operation ....................................................................... 5 
Section VI: Mechanical Parameters ............................................................................................................... 6 
Section VII: Chip Dimensions......................................................................................................................... 6 
Section VIII: SPICE Model Parameters .......................................................................................................... 8 
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 155°C
Conditions
TVJ = 250 oC,
Clamped Inductive Load
TVJ = 250 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 155 °C, tp > 100 ms
Value
1200
25
10
1.3
ID,max = 10
@ VDS VDSmax
>20
30
25
170 / 22
-55 to 250
Unit Notes
V
A
A
A
A
µs
V
V
W
°C
Sept 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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Normally - OFF Silicon Carbide Junction Transistor

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