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Número de pieza | STB27NM60ND | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STB27NM60ND (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
No Preview Available ! STB27NM60ND,
STW27NM60ND
Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II
Power MOSFETs (with fast diode) in D2PAK and TO-247 packages
Datasheet - production data
Features
TAB
3
1
D2PAK
TO-247
3
2
1
Figure 1. Internal schematic diagram
$4!"
'
3
!-V
Order codes VDS@ Tjmax RDS(on) max ID
STB27NM60ND
STW27NM60ND
650 V
0.16 Ω 21 A
• Designed for automotive applications and
AEC-Q101 qualified
• The worldwide best RDS(on)*area amongst the
fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB27NM60ND
STW27NM60ND
Table 1. Device summary
Marking
Packages
27NM60ND
D²PAK
27NM60ND
TO-247
October 2013
This is information on a product in full production.
DocID15406 Rev 4
Packaging
Tape and reel
Tube
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www.st.com
1 page STB27NM60ND, STW27NM60ND
Electrical characteristics
Table 6. Dynamic (continued)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 21 A,
VGS = 10 V,
(see Figure 17)
- 80 - nC
- 15 - nC
- 40 - nC
Rg Gate input resistance
f = 1 MHz, gate DC
Bias = 0,
test signal level = 20 mV,
ID = 0
- 1.6 -
Ω
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
DocID15406 Rev 4
5/19
19
5 Page STB27NM60ND, STW27NM60ND
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID15406 Rev 4
11/19
19
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet STB27NM60ND.PDF ] |
Número de pieza | Descripción | Fabricantes |
STB27NM60ND | N-channel Power MOSFET | STMicroelectronics |
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