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STP10N65K3 の電気的特性と機能

STP10N65K3のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP10N65K3
部品説明 N-channel Power MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STP10N65K3 Datasheet, STP10N65K3 PDF,ピン配置, 機能
STB10N65K3, STF10N65K3,
STFI10N65K3, STP10N65K3
N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs
in D2PAK, TO-220FP, I2PAKFP and TO-220 packages
Datasheet - production data
Features
TAB
3
1
D2PAK
3
2
1
TO-220FP
TAB
I2PAKFP (TO-281)
3
2
1
TO-220
Figure 1. Internal schematic diagram
' 7$%
Order codes
STB10N65K3
STF10N65K3
STFI10N65K3
STP10N65K3
VDS RDS(on) max
ID PTOT
150 W
650 V 1 Ω 10 A 35 W
150 W
100% avalanche tested
Extremely low on-resistance RDS(on)
Gate charge minimized
Very low intrinsic capacitances
Improved diode reverse recovery
characteristics
Zener-protected
* 
6 
AM01476v1
Applications
Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Order codes
STB10N65K3
STF10N65K3
STFI10N65K3
STP10N65K3
Table 1. Device summary
Marking
Package
D2PAK
10N65K3
TO-220FP
I2PAKFP (TO-281)
TO-220
Packaging
Tape and reel
Tube
August 2013
This is information on a product in full production.
DocID15732 Rev 4
1/21
www.st.com

1 Page





STP10N65K3 pdf, ピン配列
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
TO-220FP
I2PAKFP
D2PAK,
TO-220
VDS
VGS
ID
ID
IDM (1)
PTOT
IAR
EAS
dv/dt (3)
Drain source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
Single pulse avalanche energy (2)
Derating factor
Peak diode recovery voltage slope
650
± 30
10
6.3
40
35 150
7.2
212
0.28
12
1.2
ESD
Gate-source human body model
(R = 1.5 kΩ, C = 100 pF)
VISO
Tj
Tstg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; TC=25 °C)
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area.
2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V
3. ISD 10 A, di/dt = 100 A/µs, VPeak < V(BR)DSS
2.8
2500
-55 to 150
Unit
V
V
A
A
A
W
A
mJ
W/°C
V/ns
kV
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
D2PAK
TO-220FP
I2PAKFP
TO-220
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb Thermal resistance junction-pcb max
0.83 3.57 0.83 °C/W
62.5 °C/W
30 °C/W
DocID15732 Rev 4
3/21
21


3Pages


STP10N65K3 電子部品, 半導体
Electrical characteristics
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D2PAK and
TO-220
Figure 3. Thermal impedance for D2PAK and
TO-220
ID AM15460v1
(A)
10
1
0.1
0.1
1
1µs
10µs
10µs
1ms
Tj=150°C
Tc=25°C
Sinlge
pulse
10 100
10ms
VDS(V)
Figure 4. Safe operating area for TO-220FP and Figure 5. Thermal impedance for TO-220FP and
I2PAKFP
I2PAKFP
ID AM03922v1
(A)
10
1
0.1
0.01
0.1
1
10µs
Tj=150°C
Tc=25°C
Sinlge
pulse
10 100
100µs
1ms
10ms
VDS(V)
Figure 6. Output characteristics
ID AM03923v1
(A)
18
16
14 VGS=10V
7V
12
10
8
6 6V
4
2 5V
00 10 20 VDS(V)
Figure 7. Transfer characteristics
ID AM03924v1
(A)
12
11 VDS = 15 V
10
9
8
7
6
5
4
3
2
1
0
1 2 3 4 5 6 7 8 9 VGS(V)
6/21 DocID15732 Rev 4

6 Page



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部品番号部品説明メーカ
STP10N65K3

N-channel Power MOSFET

STMicroelectronics
STMicroelectronics


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