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PDF STQ1HN60K3-AP Data sheet ( Hoja de datos )
| Número de pieza | STQ1HN60K3-AP | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STQ1HN60K3-AP
N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET
in a TO-92 package
Datasheet − production data
3
2
1
TO-92
Figure 1. Internal schematic diagram
D(2)
Features
Order code
VDS
STQ1HN60K3-AP 600 V
RDS(on)
max
8Ω
ID PTOT
0.4 A 3 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
Order code
STQ1HN60K3-AP
Table 1. Device summary
Marking
Package
1HN60K3
TO-92
Packaging
Ammopack
April 2013
This is information on a product in full production.
DocID024427 Rev 1
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www.st.com
14
1 page  
STQ1HN60K3-AP
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID = 0.6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 10)
Min. Typ. Max Unit
- 7 - ns
- 10 - ns
- 23 - ns
- 31 - ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 1.2 A, VGS = 0
- 0.4 A
- 1.6 A
- 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1.2 A, di/dt = 100 A/µs - 180
VDD= 60 V
- 500
(see Figure 11)
- 5.6
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1.2 A, di/dt = 100 A/µs - 200
VDD= 60 V TJ = 150 °C
- 570
(see Figure 11)
-6
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
V(BR)GSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
Min. Typ. Max. Unit
30 -
-V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID024427 Rev 1
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STQ1HN60K3-AP
Dim.
A1
T
T1
T2
d
P0
P2
F1, F2
F3
delta H
W
W0
W1
W2
H
H0
H1
H3
D0
t
L
l1
delta P
Package mechanical data
Table 9. TO-92 ammopack mechanical data
mm
Min.
Typ.
0.45
12.50
5.65
2.40
4.98
-2.00
17.50
5.50
8.50
15.50
0.50
3.80
3.00
-1.00
0.47
12.70
6.35
2.50
5.08
18.00
6.00
9.00
18.50
16.00
25.00
1.00
4.00
Max.
4.80
3.80
1.60
2.30
0.48
12.90
7.05
2.94
5.48
2.00
19.00
6.50
9.25
0.50
21.00
18.20
27.00
2.00
4.20
0.90
11.00
1.00
DocID024427 Rev 1
11/14
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