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FQA90N15_F109 の電気的特性と機能

FQA90N15_F109のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel QFET MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQA90N15_F109
部品説明 N-Channel QFET MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQA90N15_F109 Datasheet, FQA90N15_F109 PDF,ピン配置, 機能
FQA90N15_F109
N-Channel QFET® MOSFET
150 V, 90 A, 18
Features
• RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A
• Low Gate Charge (Typ. 220 nC)
Low Crss (Typ. 200 pF)
• 100% Avalanche Tested
175°C Maximum Junction Memperature Rating
July 2015
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifier, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
D
G
D
S
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
FQA90N15_F109
150
90
63.5
360
±25
1400
90
37.5
6.0
375
2.5
-55 to +175
300
FQA90N15_F109
0.4
0.24
40
©2000 Fairchild Semiconductor Corporation
FQA90N15_F109 Rev. 1.6
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com

1 Page





FQA90N15_F109 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
102
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
10-1
Notes :
1. 250μs Pulse Test
2. TC = 25oC
100
VDS, Drain-Source Voltage [V]
101
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.12
0.09
0.06
0.03
0.00
0
VGS = 10V
VGS = 20V
Note : TJ = 25oC
50 100 150 200 250 300
ID , Drain Current [A]
Figure 5. Capacitance Characteristics
18000
15000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
12000
9000
Ciss
Coss
6000
3000
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
10-1
2
175oC
25oC
-55oC
Notes :
1. VDS = 30V
2. 250μs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
102
101
100
10-1
0.0
175oC 25oC
Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.8 1.2 1.6 2.0
VSD , Source-Drain Voltage [V]
2.4
Figure 6. Gate Charge Characteristics
12
10 VDS = 30V
VDS = 75V
8 VDS = 120V
6
4
2
Note : ID = 90 A
0
0 50 100 150 200 250
QG, Total Gate Charge [nC]
©2000 Fairchild Semiconductor Corporation
FQA90N15_F109 Rev. 1.6
3
www.fairchildsemi.com


3Pages


FQA90N15_F109 電子部品, 半導体
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQA90N15_F109 Rev. 1.6
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FQA90N15_F109

N-Channel QFET MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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