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FDZ192NZのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET」です。 |
部品番号 | FDZ192NZ |
| |
部品説明 | N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDZ192NZダウンロード(pdfファイル)リンクがあります。 Total 7 pages
January 2010
FDZ192NZ
N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
20 V, 5.3 A, 39 mΩ
Features
Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 2.0 A
Max rDS(on) = 43 mΩ at VGS = 2.5 V, ID = 2.0 A
Max rDS(on) = 49 mΩ at VGS = 1.8 V, ID = 1.0 A
Max rDS(on) = 55 mΩ at VGS = 1.5 V, ID = 1.0 A
Occupies only 1.5 mm2 of PCB area.Less than 50% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
HBM ESD protection level > 2200V (Note3)
RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" WLCSP packaging process, the
FDZ192NZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Applications
Battery management
Load switch
Battery protection
PIN1
S
SG
DS
D
BOTTOM
TOP
WL-CSP 1x1.5 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
5.3
15
1.9
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
133
°C/W
Device Marking
8
Device
FDZ192NZ
Package
WL-CSP 1x1.5 Thin
Reel Size
7”
Tape Width
8 mm
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
FDZ192NZ Rev.C1
1
www.fairchildsemi.com
1 Page Typical Characteristics TJ = 25 °C unless otherwise noted
15
VGS = 4.5 V
12
VGS = 3 V
VGS = 2.5 V
9
VGS = 1.8 V
6
VGS = 1.5 V
3
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0.0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.5
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
2.0
VGS =1.5 V
1.5 VGS = 1.8 V
1.0
VGS = 2.5 V VGS = 3 V VGS = 4.5 V
0.5
0
369
ID, DRAIN CURRENT (A)
12
15
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 2 A
VGS = 4.5 V
1.4
1.2
1.0
100
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
ID = 2 A
60
40 TJ = 125 oC
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
20
0
0.5
TJ = 25 oC
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
4.5
15
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
12
VDS = 5 V
9
TJ = 150 oC
6
TJ = 25 oC
3
TJ = -55 oC
0
0.6 0.8 1.0 1.2 1.4 1.6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
20
10 VGS = 0 V
1 TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2010 Fairchild Semiconductor Corporation
FDZ192NZ Rev.C1
3
www.fairchildsemi.com
3Pages Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
FDZ192NZ Rev.C1
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDZ192NZ | N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET | Fairchild Semiconductor |