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VS-MBR3035WTPbF の電気的特性と機能

VS-MBR3035WTPbFのメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-MBR3035WTPbF
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-MBR3035WTPbF Datasheet, VS-MBR3035WTPbF PDF,ピン配置, 機能
VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
TO-247AC
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
13
Anode
1
2
Anode
2
Common
cathode
TO-247AC
2 x 15 A
35 V, 45 V
See Electrical table
100 mA at 125 °C
150 °C
Common cathode
See Electrical table
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-MBR30..WT... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
IFRM
VRRM
Rectangular waveform (per device)
TC = 125 °C (per leg)
IFSM tp = 5 μs sine
VF 20 Apk, TJ = 125 °C
TJ Range
VALUES
30
30
35/45
1020
0.60
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL VS-MBR3035WTPbF VS-MBR3035WT-N3 VS-MBR3045WTPbF VS-MBR3045WT-N3 UNITS
Maximum DC reverse
voltage
VR
35 35 45 45 V
Maximum working peak
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Peak repetitive reverse surge current
IRRM
TEST CONDITIONS
TC = 125 °C, rated VR
Rated VR, square wave, 20 kHz TC = 125 °C
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
VRRM applied
Surge applied at rated load conditions half wave,
single phase, 60 Hz
2.0 µs 1.0 kHz
VALUES
15
30
30
1020
200
2.0
UNITS
A
Revision: 30-Aug-11
1 Document Number: 94293
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-MBR3035WTPbF pdf, ピン配列
VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series
www.vishay.com
Vishay Semiconductors
100
TJ = 150 °C
TJ = 125 °C
10 TJ = 25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1000
1000
100
10
1
0.1
0.01
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
TJ = 25 °C
100
0 10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
10
1
0.1
0.01
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
1
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
10
Revision: 30-Aug-11
3 Document Number: 94293
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-MBR3035WTPbF 電子部品, 半導体
www.vishay.com
Outline Dimensions
Vishay Semiconductors
TO-247
DIMENSIONS in millimeters and inches
B
(2) R/2
Q
2xR
(2)
(3)
E
N
S
D
12
3
(5) L1
CL
2 x b2
3xb
0.10 M C A M
2x e
b4
See view B
A
A2
A
D
A
C
A1
A
(6) Φ P
Ø KM DBM
D2
(Datum B)
Φ P1
Thermal pad
D1 (4)
4
(4)
E1
0.01 M D B M
View A - A
Plating
(b1, b3, b5)
Base metal
(c) c1
D DE E
CC
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.65 5.31 0.183 0.209
A1 2.21 2.59 0.087 0.102
D2 0.51 1.30 0.020 0.051
E
15.29 15.87 0.602 0.625
3
A2 1.50 2.49 0.059 0.098
E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055
e
5.46 BSC
0.215 BSC
b1 0.99 1.35 0.039 0.053
Ø K 2.54
0.010
b2 1.65 2.39 0.065 0.094
b3 1.65 2.34 0.065 0.092
L 14.20 16.10 0.559 0.634
L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135
N 7.62 BSC
0.3
b5 2.59 3.38 0.102 0.133
Ø P 3.56 3.66 0.14 0.144
c 0.38 0.89 0.015 0.035
Ø P1
- 6.98 - 0.275
c1 0.38 0.84 0.015 0.033
D
19.71 20.70 0.776 0.815
3
Q 5.31 5.69 0.209 0.224
R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 -
4
S
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c
Revision: 07-Apr-15
1 Document Number: 95223
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-MBR3035WTPbF

Schottky Rectifier ( Diode )

Vishay
Vishay


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