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FQA7N80C_F109のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | FQA7N80C_F109 |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFQA7N80C_F109ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FQA7N80C_F109
N-Channel QFET® MOSFET
800 V, 7 A, 1.9 Ω
Features
• 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A
• Low Gate Charge (Typ. 27nC)
• Low Crss (Typ. 10pF)
• 100% Avalanche Tested
• RoHS Compliant
May 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
G
DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA7N80C_F109
800
7.0
4.4
28.0
± 30
580
7.0
30
4.0
198
1.75
-55 to +150
300
FQA7N80C_F109
0.63
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA7N80C_F109 Rev C2
1
www.fairchildsemi.com
1 Page Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Top : 15.V0GVS
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom: 5.5 V
100
10-1
Notes :
1. 250µs PulseTest
2. TC = 25
10-2
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. VDS = 50V
2. 250µs Pulse Test
468
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
4.0
3.5
3.0 VGS = 10V
2.5 VGS = 20V
2.0
1.5
Note : TJ = 25
1.0
0 3 6 9 12 15 18
ID, Drain Current [A]
101
100
10-1
0.2
150 25
Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 5. Capacitance Characteristics
2000
1500
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
500
0
10-1
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
Note : ID = 6.6A
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
©2007 Fairchild Semiconductor Corporation
FQA7N80C_F109 Rev C2
3
www.fairchildsemi.com
3Pages DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2007 Fairchild Semiconductor Corporation
FQA7N80C_F109 Rev C2
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
FQA7N80C_F109 | N-Channel MOSFET | Fairchild Semiconductor |