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PDF VUO62-12NO7 Data sheet ( Hoja de datos )
| Número de pieza | VUO62-12NO7 | |
| Descripción | Standard Rectifier Module | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO62-12NO7
- ~~~ +
VUO62-12NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
60 A
550 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: PWS-D
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410a
1 page  
VUO62-12NO7
Rectifier
100
80
500
50 Hz
0.8 x V RRM
10000
VR = 0 V
IF 60
[A] 40
20 TVJ =
125°C
150°C
0
0.4
TVJ = 25°C
0.8 1.2
VF [V]
1.6
Fig. 1 Forward current vs.
voltage drop per diode
400
IFSM
[A]
300
TVJ = 45°C
TVJ = 150°C
I2t
1000
[A2s]
TVJ = 45°C
TVJ = 150°C
200
0.001
0.010
0.100
t [s]
1.000
Fig. 2 Surge overload current
vs. time per diode
100
1
t [ms]
10
Fig. 3 I2t vs. time per diode
30
20
Ptot
[W]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
Graph 1*
100
80
60
IF(AV)M
40
[A]
20
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 10 20 0 25 50 75 100 125 150 175
IdAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
1.2
0.8
ZthJC
[K/W]
0.4
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 0.05
2 0.14
3 0.25
4 0.35
5 0.31
ti (s)
0.001
0.030
0.060
0.130
0.920
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VUO62-12NO7.PDF ] | |
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