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PDF VUO25-18NO8 Data sheet ( Hoja de datos )
| Número de pieza | VUO25-18NO8 | |
| Descripción | Standard Rectifier Module | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO25-18NO8
- ~~~ +
VUO25-18NO8
3~
Rectifier
VRRM =
I DAV =
I FSM =
1800 V
20 A
380 A
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: FO-B
● Industry standard outline
● RoHS compliant
● ¼“ fast-on terminals
● Easy to mount with one screw
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130529b
1 page  
VUO25-18NO8
Rectifier
50 350 800
50 Hz
0.8 x V RRM
VR = 0 V
40
300
600
IF 30
[A]
20
TVJ =
10 125°C
150°C
TVJ = 25°C
0
0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
IFSM
250
[A]
200
TVJ = 45°C
TVJ = 150°C
150
10-3
10-2
10-1
t [s]
100
Fig. 2 Surge overload current
vs. time per diode
I2t
400
[A2s]
TVJ = 45°C
TVJ = 150°C
200
1 10
t [ms]
Fig. 3 I2t vs. time per diode
8
6
Ptot
4
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
2
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
20
16
IF(AV)M 12
[A] 8
4
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 2 4 6 8 0 25 50 75 100 125 150 175
IF(AV)M [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
10
8
ZthJC 6
[K/W] 4
2
0
1
10
100
1000
10000
100000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 0.040
2 0.250
3 1.810
4 5.900
ti (s)
0.005
0.030
0.500
3.200
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130529b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VUO25-18NO8.PDF ] | |
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