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Número de pieza | A3V64S40GTP | |
Descripción | 64M Single Data Rate Synchronous DRAM | |
Fabricantes | Zentel | |
Logotipo | ||
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No Preview Available ! A3V64S40GTP
64M Single Data Rate Synchronous DRAM
64Mb Synchronous DRAM Specification
A3V64S40GTP
Zentel Electronics Corp.
Revision 1.0
Dec., 2012
1 page A3V64S40GTP
64M Single Data Rate Synchronous DRAM
Pin Descriptions
SYMBOL
TYPE
DESCRIPTION
CLK
CKE
Input
Input
Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the positive
edge of CLK. CLK also increments the internal burst counter and controls the output registers.
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. Deactivating the
clock provides PRECHARGE POWER-DOWN and SELF REFRESH operation (all banks idle),
ACTIVE POWER-DOWN (row active in any bank), or CLOCK SUSPEND operation (burst /
access in progress). CKE is synchronous except after the device enters self refresh mode, where
CKE becomes asynchronous until after exiting the same mode. The input buffers, including CLK,
are disabled during self refresh mode, providing low standby power. CKE may be tied HIGH.
Chip Select: /CS enables (registered LOW) and disables (registered HIGH) the command
decoder. All commands are masked when /CS is registered HIGH. /CS provides for external
/CS Input bank selection on systems with multiple banks. /CS is considered part of the command code.
/CAS,
/RAS,
/WE
LDQM,
UDQM,
Input
Input
Command Inputs: /CAS, /RAS, and /WE (along with /CS) define the command being entered.
Input / Output Mask: DQM is sampled HIGH and is an input mask signal for write accesses and
an output disable signal for read accesses. Input data is masked during a WRITE cycle. The
output buffers are placed in a High-Z state (two-clock latency) when during a READ cycle. LDQM
corresponds to DQ0–DQ7, UDQM corresponds to DQ8–DQ15.
BA0, BA1
A0–A11
Input
Input
Bank Address Input(s): BA0 and BA1 define to which bank the ACTIVE, READ, WRITE or
PRECHARGE command is being applied.
A0-11 specify the Row / Column Address in conjunction with BA0,1. The Row Address is
specified by A0-11. The Column Address is specified by A0-7. A10 is also used to indicate
precharge option. When A10 is high at a read / write command, an auto precharge is performed.
When A10 is high at a precharge command, all banks are precharged.
DQ0–DQ15 I/O Data Input / Output: Data bus.
Internally Not Connected: These could be left unconnected, but it is recommended they be
NC – connected or VSS.
VddQ
VssQ
Vdd
Vss
Supply
Supply
Supply
Supply
Data Output Power: Provide isolated power to output buffers for improved noise immunity.
Data Output Ground: Provide isolated ground to output buffers for improved noise immunity.
Power for the input buffers and core logic.
Ground for the input buffers and core logic.
Revision 1.0
Page 4/39
Dec., 2012
5 Page A3V64S40GTP
64M Single Data Rate Synchronous DRAM
TRUTH TABLE
Command Truth Table
COMMAND
Symbol CKEn-1
Device deselect
No operation
Burst stop
Read
Read with auto precharge
Write
Write with auto precharge
Bank activate
Precharge select bank
Precharge all banks
Mode register set
DSL
NOP
BST
RD
RDA
WR
WRA
ACT
PRE
PALL
MRS
H
H
H
H
H
H
H
H
H
H
H
(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
CKEn
X
X
X
X
X
X
X
X
X
X
X
/CS
H
L
L
L
L
L
L
L
L
L
L
/RAS
X
H
H
H
H
H
H
L
L
L
L
/CAS
X
H
H
L
L
L
L
H
H
H
L
/WE
X
H
L
H
H
L
L
H
L
L
L
BA1
X
X
X
V
V
V
V
V
V
X
L
BA0
X
X
X
V
V
V
V
V
V
X
L
A10/
AP
X
X
X
L
H
L
H
V
L
H
L
A11,
A9 ~ A0
X
X
X
V
V
V
V
V
X
X
OP code
CKE Truth Table
Current state
Function
Activating
Enter Clock suspend or
Active power down
Clock suspend or
Active power down
Maintain Clock suspend or
Active power down
Clock suspend or
Active power down
Exit Clock suspend or
Active power down
All banks idle
Auto refresh command
All banks idle
Enter Self refresh
All banks idle
Enter Precharge power down
Symbol
REF
SREF
Self refresh
Exit Self refresh
Precharge
down
power Exit Prechage power down
Precharge power Maintain Precharge power
down
down
(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
CKEn-1
H
H
L
L
H
H
H
H
L
L
L
L
L
CKEn
L
L
L
H
H
L
L
L
H
H
H
H
L
/CS
L
H
X
X
L
L
L
H
L
H
L
H
X
/RAS
V
X
X
X
L
L
H
X
H
X
H
X
X
/CAS
V
X
X
X
L
L
H
X
H
X
H
X
X
/WE /Address
VV
XX
XX
XX
HX
HX
HX
XX
HX
XX
HX
XX
XX
Revision 1.0
Page 10/39
Dec., 2012
11 Page |
Páginas | Total 30 Páginas | |
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