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SBRS8190T3G の電気的特性と機能

SBRS8190T3GのメーカーはON Semiconductorです、この部品の機能は「Schottky Power Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 SBRS8190T3G
部品説明 Schottky Power Rectifier
メーカ ON Semiconductor
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SBRS8190T3G Datasheet, SBRS8190T3G PDF,ピン配置, 機能
MBRS1100T3G,
SBRS81100T3G,
MBRS190T3G,
SBRS8190T3G
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:
Features
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage 100 Volts
175°C Operating Junction Temperature
Guardring for Stress Protection
AECQ101 Qualified and PPAP Capable
SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2,500 units per reel
Cathode Polarity Band
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
90, 100 VOLTS
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B1xG
G
B1 = Device Code
x = C for MBRS1100T3
9 for MBRS190T3
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
June, 2015 Rev. 11
1
Publication Order Number:
MBRS1100T3/D

1 Page





SBRS8190T3G pdf, ピン配列
MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
TYPICAL ELECTRICAL CHARACTERISTICS
20
10
5 TJ = 150°C
2
1 100°C
0.5
25°C
0.2
0.1
0.05
0.02
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1k
400
200
100
40
20
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
0
TJ = 150°C
125°C
100°C
25°C
10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if VR is sufficient below rated VR.
3.2 2.0
2.8
TJ = 100°C
2.4
DC
1.5
2.0
SQUARE
1.6 WAVE
1.2 DC
1.0 SQUARE
WAVE
0.8 0.5
0.4
00
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 145 150 155 160 165 170 175 180
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
TL, LEAD TEMPERATURE (°C)
Figure 3. Power Dissipation
Figure 4. Current Derating, Lead
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0.1
0.2
NOTE: TYPICAL CAPACITANCE
NOTE: AT 0 V = 270 pF
0.5 1 2
5 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
50 100
www.onsemi.com
3


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部品番号部品説明メーカ
SBRS8190T3G

Schottky Power Rectifier

ON Semiconductor
ON Semiconductor


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