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FGB20N60SFD_F085 の電気的特性と機能

FGB20N60SFD_F085のメーカーはFairchild Semiconductorです、この部品の機能は「20A Field Stop IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGB20N60SFD_F085
部品説明 20A Field Stop IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGB20N60SFD_F085 Datasheet, FGB20N60SFD_F085 PDF,ピン配置, 機能
FGB20N60SFD_F085
600V, 20A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A
• High input impedance
• Fast switching
• Qualified to Automotive Requirements of AEC-Q101
• RoHS complaint
Applications
• Inverters, SMPS, PFC, UPS
• Automotive Chargers, Converters, High Voltage
Auxiliaries
C
October 2013
General Description
Using novel field-stop IGBT technology, Fairchild’s new series
of field-stop IGBTs offers the optimum performance for
automotive chargers, inverters, and other applications where
low conduction and switching losses are essential.
C
D2-PAK
GE
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
IFM(1)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT) ( 2)
RθJC(Diode)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
1
G
E
Ratings
600
± 20
40
20
60
20
10
60
208
83
-55 to +150
-55 to +150
300
Ratings
0.6
2.6
Typ.
75
Units
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
Units
oC/W
www.fairchildsemi.com

1 Page





FGB20N60SFD_F085 pdf, ピン配列
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 10A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IES = 10A, dIES/dt = 200A/μs
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
1.9
1.7
111
204
174
463
Max
2.5
-
-
-
244
-
Units
V
ns
nC
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2:Rthjc for D2-PAK: according to Mil standard 883-1012 test method.
Rthja for D2-PAK: according to JESD51-2, test method environmental condition and JESD51-3,low effective thermal conductivity test board for leaded surface mount package.
thermal measurements. JESD51-2: Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air).
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
3
www.fairchildsemi.com


3Pages


FGB20N60SFD_F085 電子部品, 半導体
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
100 td(off)
tf
10
0 10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
td(off )
60
Figure 14. Turn-on Characteristics vs.
Collector Current
100
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
tr
10 td(on)
0 10 20 30 40
Collector Current, IC [A]
Figure 16. Switching Loss vs. Gate Resistance
3
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
1
TC = 25oC
TC = 125oC
Eon
tf
10
0 10 20 30 40
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
1 TC = 125oC
Eon
0.1
0.01
0
Eof f
10 20 30
Collector Current, IC [A]
40
Eoff
0.1
0 10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 18. Turn off Switching
SOA Characteristics
100
60
10
Safe Operating Area
1 VGE = 15V, TC = 125oC
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FGB20N60SFD_F085

20A Field Stop IGBT

Fairchild Semiconductor
Fairchild Semiconductor


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