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PDF S10N65C Data sheet ( Hoja de datos )
| Número de pieza | S10N65C | |
| Descripción | 650V N-Channel MOSFET | |
| Fabricantes | SEAWON | |
| Logotipo |  |
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650V N-Channel MOSFET
Description
The 10N65 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in
switching power supplies and adaptors.
Features
• 9.5A, 650V, RDS(on) = 0.75Ω @VGS = 10 V
• Low gate charge ( typical 36 nC)
• Low Crss ( typical 5.8pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
S10N65C
1
TO-220
1
TO-220F
2.Drain
1.Gate
3.Source
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R JC
R CS
R JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0510-85899716
10N65
10N65F
650
10 10 *
6.5 6.5 *
40 40 *
±30
758
10
19.8
4.5
198 52
1.58 0.41
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
10N65
0.63
0.5
62.5
10N65F
2.4
--
62.5
Units
°C/W
°C/W
°C/W
www.seawontech.com
1 page  
Typical Characteristics (Continued)
S10N65C
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
※ N o te s :
1 . Z θ JC(t) = 0.8 ℃ /W M a x.
2 . D uty F a ctor, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W a ve P u lse D u ratio n [sec]
101
Figure 11-1. Transient Thermal Response Curve for 10N65
D = 0.5
100
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
※ N otes :
1. Zθ
(t)
JC
=
2.5
℃ /W
M ax.
2. D uty Factor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
sin g le p u ls e
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D uratio n [sec]
101
Figure 11-2. Transient Thermal Response Curve for 10N65F
0510-85899716
www.seawontech.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet S10N65C.PDF ] | |
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