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Número de pieza | VS-2EFH02-M3 | |
Descripción | Hyperfast Rectifier | |
Fabricantes | Vishay | |
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VS-2EFH02-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 A FRED Pt®
DO-219AB (SMF)
Cathode
Anode
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF (typ. 125 °C)
trr
TJ max.
Diode variation
DO-219AB (SMF)
2A
200 V
0.75 V
25 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyperfast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber boost,
lighting, as high frequency rectifiers, and freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
IFSM
Operating junction and storage temperature range TJ, TStg
Note
(1) Device on PCB with 8 mm x 16 mm soldering lands
TEST CONDITIONS
TC = 150 °C (1)
TJ = 25 °C
VALUES
200
2
50
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR, VR IR = 100 μA
200
Forward voltage
IF = 2 A
VF
IF = 2 A, TJ = 125 °C
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 125 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 200 V
-
TYP.
-
0.88
0.75
-
1
8
MAX.
-
0.95
0.82
2
8
-
UNITS
V
μA
pF
Revision: 20-Apr-15
1 Document Number: 95789
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page www.vishay.com
DIMENSIONS in millimeters (inches)
DO-219AB (SMF)
0.85 (0.033)
0.35 (0.014)
Outline Dimensions
Vishay Semiconductors
Detail Z
enlarged
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
1.08 (0.043)
0.88 (0.035)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
2.9 (0.114)
Revision: 29-Oct-14
1 Document Number: 95572
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet VS-2EFH02-M3.PDF ] |
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VS-2EFH02-M3 | Hyperfast Rectifier | Vishay |
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