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VS-2EFH01-M3 の電気的特性と機能

VS-2EFH01-M3のメーカーはVishayです、この部品の機能は「Hyperfast Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-2EFH01-M3
部品説明 Hyperfast Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-2EFH01-M3 Datasheet, VS-2EFH01-M3 PDF,ピン配置, 機能
www.vishay.com
VS-2EFH01-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 A FRED Pt®
DO-219AB (SMF)
Cathode
Anode
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF (typ. 125 °C)
trr
TJ max.
Diode variation
DO-219AB (SMF)
2A
100 V
0.75 V
25 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers, and freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
IFSM
Operating junction and storage temperature range TJ, TStg
Note
(1) Device on PCB with 8 mm x 16 mm soldering lands
TEST CONDITIONS
TC = 150 °C (1)
TJ = 25 °C
VALUES
100
2
50
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR, VR IR = 100 μA
100
Forward voltage
IF = 2 A
VF
IF = 2 A, TJ = 125 °C
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 125 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 100 V
-
TYP.
-
0.88
0.75
-
0.5
8
MAX.
-
0.95
0.82
2
8
-
UNITS
V
μA
pF
Revision: 20-Apr-15
1 Document Number: 95787
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-2EFH01-M3 pdf, ピン配列
www.vishay.com
VS-2EFH01-M3
Vishay Semiconductors
100
10
1
0 20 40 60 80 100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
2.5
RMS limit
2
1.5
D = 0.20
D = 0.25
1 D = 0.33
D = 0.50
D = 0.75
0.5 DC
0
0 0.5 1 1.5 2 2.5 3 3.5
IF(AV) - Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
180
175
170
165 DC
160
155
Square wave (D = 0.50)
150 80 % rated VR applied
145
See note (1)
140
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
35
30
25
20 25 °C
125 °C
15
10
5
100
1000
dIF/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
45
40
35 125 °C
30
25
20 25 °C
15
10
100
dIF/dt (A/μs)
1000
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 20-Apr-15
3 Document Number: 95787
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-2EFH01-M3 電子部品, 半導体
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1 Document Number: 91000

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部品番号部品説明メーカ
VS-2EFH01-M3

Hyperfast Rectifier

Vishay
Vishay


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