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PDF 2SA1235 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1235 | |
| Descripción | SMALL-SIGNAL TRANSISTOR | |
| Fabricantes | Isahaya Electronics Corporation | |
| Logotipo |  |
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〈SMALL-SIGNAL TRANSISTOR〉
DESCRIPTION
2SA1235 is a mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max（@Ic=-100mA,IB=-10mA）
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
2SA1235
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(mini type)
OUTLINE DRAWING
0.5
2.5
1.5 0.5
Unit：ｍｍ
①
②③
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO Collector to Base voltage
VCEO Collector to Emitter voltage
VEBO Emitter to Base voltage
I O Collector current
Pc Collector dissipation
Tj Junction temperature
Tstg Storage temperature
Ratings
-50
-50
-6
-200
200
＋150
-55～＋150
Unit
V
V
V
mA
mW
℃
℃
JEITA：SC-59
JEDEC：Similar to TO-236
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I C=-100μA ,R BE=∞
V CB=-50V, I E=0mA
V EB=-6V, I C=0mA
V CE=-6V, I C=-1mA
※
V CE=-6V, I C=-0.1mA
I C=-100mA ,IB=-10mA
V CE=-6V, I E=10mA
V CB=-6V, I E=0,f=1MHz
V CE=-6V, I E=0.3mA,f=100Hz,RG=10kΩ
Limits
Min Typ Max
-50 -
-
- - -0.1
- - -0.1
150 - 800
90 - -
- - -0.3
- 200
-
-4-
- - 20
※） It shows hFE classification in below table.
Item
ＥＦＧ
ｈＦＥ Item
150～300 250～500 400～800
Unit
V
μA
μA
V
MHz
pF
dB
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA1235.PDF ] | |
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