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MJE13003K の電気的特性と機能

MJE13003KのメーカーはUnisonic Technologiesです、この部品の機能は「NPN SILICON POWER TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 MJE13003K
部品説明 NPN SILICON POWER TRANSISTOR
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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MJE13003K Datasheet, MJE13003K PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
MJE13003K
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
„ DESCRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE.
„ FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
„ APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
MJE13003KL-x-x-T60-K
MJE13003KG-x-x-T60-K
MJE13003KL-x-x-T6C-A-K MJE13003KG-x-x-T6C-A-K
MJE13003KL-x-x-T6C-F-K MJE13003KG-x-x-T6C-F-K
MJE13003KL-x-x-T92-B
MJE13003KG-x-x-T92-B
MJE13003KL-x-x-T92-K
MJE13003KG-x-x-T92-K
MJE13003KL-x-x-T92-R
MJE13003KG-x-x-T92-R
MJE13003KL-x-x-T9L-B
MJE13003KG-x-x-T9L-B
MJE13003KL-x-x-T9L-K
MJE13003KG-x-x-T9L-K
MJE13003KL-x-x-T9L-R
MJE13003KG-x-x-T9L-R
MJE13003KL-x-x-TM3-T
MJE13003KG-x-x-TM3-T
MJE13003KL-x-x-TN3-R
MJE13003KG-x-x-TN3-R
MJE13003KL-x-x-TN3-T
MJE13003KG-x-x-TN3-T
Package
TO-126
TO-126C
TO-126C
TO-92
TO-92
TO-92
TO-92L
TO-92L
TO-92L
TO-251
TO-252
TO-252
Pin Assignment
123
BCE
ECB
BCE
ECB
ECB
ECB
ECB
ECB
ECB
BCE
BCE
BCE
Packing
Bulk
Bulk
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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MJE13003K pdf, ピン配列
MJE13003K
NPN SILICON TRANSISTOR
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS (Note)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
TC=25°C
TC=100°C
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS (Note)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Note: Pulse Test : PW=300μs, Duty Cycle2%
SYMBOL
TEST CONDITIONS
ICEO
IEBO
IC=10 mA , IB=0
VCEO=Rated Value,
VBE(OFF)=1.5 V
VEB=9 V, IC=0
MIN TYP MAX UNIT
400 V
1
5
mA
1 mA
Is/b
RBSOA
hFE1 IC=0.5A, VCE=5V
hFE2 IC=1A, VCE=2V
IC=0.5A, IB=0.1A
VCE(SAT)
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A, TC=100°C
IC=0.5A, IB=0.1A
VBE(SAT) IC=1A, IB=0.25A
IC=1A, IB=0.25A, TC=100°C
fT IC=100mA, VCE=10V, f=1MHz
Cob VCB=10V, IE=0, f=0.1MHz
See Figure 5
See Figure 6
8 51
5 30
0.5
1
3
V
1
1
1.2 V
1.1
4 10
21
MHz
pF
tD
tR VCC=125V, IC=1A, IB1=IB2=0.2A,
tS tP=25μs, Duty Cycle1%
tF
tSTG
tC
tF
IC=1A, Vclamp=300V, IB1=0.2A,
VBE(OFF)=5Vdc, TC=100°C
0.05 0.1
0.5 1
24
0.4 0.7
μs
μs
μs
μs
1.7 4
0.29 0.75
0.15
μs
μs
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13003K 電子部品, 半導体
MJE13003K
„ SAFE OPERATING AREA INFORMATION
NPN SILICON TRANSISTOR
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC25°C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5.
TJ(PK) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 6 gives PBSOA
characteristics.
The Safe Operating Area of Figures 5 and 6 are specified ratings (for these devices under the test conditions
shown.)
Figure 5. Active Region Safe Operating Area
10
5
2 10μs
100μs
1 5.0 ms
0.5 dc 1.0 ms
Tc=25
0.2
0.1
Thermal Limit(Single Pule)
Bonding Wire Limit
0.05
Second Breakdown Limit
Curves Apply Below Rated VCEO
0.02
0.01
5
10 20
50 100 200 300 500
Collector-Emitter Voltage, VCE (V)
Figure 6. Reverse Bias Safe Operating Area
1.6
1.2
VBE(OFF)=9V
TJ100
0.8 IB1=1A
0.4
0
0
5V
3V
1.5V
100 200 300 400 500 600 700
Collector-Emitter Clamp Voltage,VCE (V)
800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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