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FDS4465_F085のメーカーはFairchild Semiconductorです、この部品の機能は「P-Channel 1.8V Specified PowerTrench MOSFET」です。 |
部品番号 | FDS4465_F085 |
| |
部品説明 | P-Channel 1.8V Specified PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS4465_F085ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
June 2012
FDS4465_F085
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –13.5 A, –20 V.
RDS(ON) = 8.5 mΩ @ VGS = –4.5 V
RDS(ON) = 10.5 mΩ @ VGS = –2.5 V
RDS(ON) = 14 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High current and power handling capability
• Qualified to AEC Q101
• RoHS Compliant
DD DDDD
DD
SO-8
Pin 1 SO-8
SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4465
FDS4465_F085
13’’
©2012 Fairchild Semiconductor Corporation
FDS4465_F085 Rev. C1
1
5
6
7
8
Ratings
–20
±8
–13.5
–50
2.5
1.2
1
–55 to +150
50
125
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
www.fairchildsemi.com
1 Page Typical Characteristics
50
VGS = -4.5V
40
-2.5V
-2.0V
-1.8V
30
-1.5V
20
10
0
0 0.5 1
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.5
Figure 1. On-Region Characteristics.
1.6
ID = -13.5A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = -5.0V
40
30
20
10
0
0
TA = 125oC
25oC
-55oC
0.5 1 1.5
-VGS, GATE TO SOURCE VOLTAGE (V)
2
Figure 5. Transfer Characteristics.
3
2.6
2.2
VGS = -1.5V
1.8
1.4
1
-1.8V
-2.0V
-2.5V
-4.5V
0.6
0
10 20 30 40
-ID, DRAIN CURRENT (A)
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
0.02
0.015
0.01
0.005
0
0
ID = -6.3A
TA = 25oC
TA = 125oC
1234
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
10
1
0.1
0.01
VGS = 0V
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4465_F085 Rev. C1 3 www.fairchildsemi.com
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDS4465_F085 | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |