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Datasheet BSS127 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BSS127Small-Signal-Transistor

Type SIPMOS® Small-Signal-Transistor Features • n-channel • enhancement mode • Logic level (4.5V rated) • dv /dt rated • 100%lead-free; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID BSS127 600 V 500 �
Infineon Technologies
Infineon Technologies
transistor
2BSS127N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V(BR)DSS 600V RDS(ON) 160Ω @ VGS = 10V Package SC59 SOT23 ID TA = +25°C 70mA Description This new generation uses advanced planar technology MOSFET, provide excellent high Voltage and fast switching, making it ideal for small-si
Diodes Incorporated
Diodes Incorporated
mosfet
3BSS127SMALL-SIGNAL-TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD BSS127 0.021A, 600V SMALL-SIGNAL-TRANSISTOR  DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.  FEATURES * RDS(ON)<600Ω @ VGS= 4.
Unisonic Technologies
Unisonic Technologies
transistor


BSS Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BSS100SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

BSS 100 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100 V ID 0.22 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S499 Q62702-S007 Q62702-S2
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
2BSS100N-Channel Logic Level Enhancement Mode Field Effect Transistor

September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces
Fairchild Semiconductor
Fairchild Semiconductor
transistor
3BSS101SIPMOS Small-Signal Transistor

BSS 101 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 101 Type BSS 101 BSS 101 Pin 2 G Marking SS 101 Pin 3 D VDS 240 V ID 0.13 A RDS(on) 16 Ω Package TO-92 Ordering Code Q62702-S493 Q62702-S636 Tape and Re
Siemens Semiconductor
Siemens Semiconductor
transistor
4BSS110P-Channel Enhancement Mode Field Effect Transistor

May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-st
Fairchild Semiconductor
Fairchild Semiconductor
transistor
5BSS110SIPMOS Small-Signal Transistor

BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D VDS -50 V ID -0.17 A RDS(on) 10 Ω Package TO-92 Ordering Code Q62702-S500 Q62702-S278 Q67
Siemens Semiconductor
Siemens Semiconductor
transistor
6BSS110P-channel enhancement mode vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 1995 Apr 07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor F
NXP Semiconductors
NXP Semiconductors
transistor
7BSS119SIPMOS Small-Signal Transistor (N channel Enhancement mode)

BSS 119 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V Pin 1 G Pin 2 S Pin 3 D Type BSS 119 Type BSS 119 VDS 100 V ID 0.17 A RDS(on) 6Ω Package SOT-23 Marking sSH Ordering Code Q67000-S007 Tape and Reel Information E6327 Maximum Ratings
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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