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SCT2160KE の電気的特性と機能

SCT2160KEのメーカーはROHM Semiconductorです、この部品の機能は「N-channel SiC power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SCT2160KE
部品説明 N-channel SiC power MOSFET
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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SCT2160KE Datasheet, SCT2160KE PDF,ピン配置, 機能
SCT2160KE
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
160mW
22A
165W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lApplication
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives
lOutline
TO-247
lInner circuit
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
-
SCT2160KE
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
PD
Tj
Tstg
Value
1200
22
16
55
-6 to 22
165
175
-55 to +175
Unit
V
A
A
A
V
W
°C
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.05 - Rev.A

1 Page





SCT2160KE pdf, ピン配列
SCT2160KE
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
gfs *3
Ciss
Coss
Crss
VDS = 10V, ID = 7A
VGS = 0V
VDS = 800V
f = 1MHz
Co(er)
VGS = 0V
VDS = 0V to 500V
td(on) *3
tr *3
td(off) *3
tf *3
VDD = 400V, ID = 7A
VGS = 18V/0V
RL = 57W
RG = 0W
Eon *3
Eoff *3
VDD = 600V, ID=7A
VGS = 18V/0V
RG = 0W, L=500mH
*Eon includes diode
reverse recovery
Data Sheet
Values
Min. Typ. Max.
- 2.4 -
- 1200 -
- 45 -
-7-
Unit
S
pF
- 71 - pF
- 23 -
- 25 -
ns
- 67 -
- 27 -
- 126 -
- 55 -
mJ
lGate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg *3
Qgs *3
Qgd *3
V(plateau)
VDD = 400V
ID = 7A
VGS = 18V
VDD = 400V, ID = 7A
Values
Min. Typ. Max.
- 62 -
- 14 -
- 20 -
- 9.6 -
Unit
nC
V
*1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 Pulsed
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/13
2013.05 - Rev.A


3Pages


SCT2160KE 電子部品, 半導体
SCT2160KE
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
20
20V
18 18V
16 16V
14 14V
12
Ta=25ºC
Pulsed
12V
10
8
6 10V
4
2
VGS= 8V
0
0 2 4 6 8 10
Drain - Source Voltage : VDS [V]
Data Sheet
Fig.5 Typical Output Characteristics(II)
10
20V
9 18V
8 16V
7 14V
6
5
4
3
2
1
0
01
Ta=25ºC
Pulsed
12V
10V
VGS= 8V
2345
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 150°C Typical Output
Characteristics(I)
20
20V
18 18V
16 16V
14 14V
12V
12 10V
10
8
6 VGS= 8V
4
2
Ta=150ºC
Pulsed
0
0 2 4 6 8 10
Drain - Source Voltage : VDS [V]
Fig.7 Tj = 150°C Typical Output
Characteristics(II)
10 20V
9 18V
10V
8 16V
7 14V
6 12V
5
4 VGS= 8V
3
2
1
Ta=150ºC
Pulsed
0
012345
Drain - Source Voltage : VDS [V]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
6/13
2013.05 - Rev.A

6 Page



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部品番号部品説明メーカ
SCT2160KE

N-channel SiC power MOSFET

ROHM Semiconductor
ROHM Semiconductor


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