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SBC846 の電気的特性と機能

SBC846のメーカーはON Semiconductorです、この部品の機能は「General Purpose Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 SBC846
部品説明 General Purpose Transistors
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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SBC846 Datasheet, SBC846 PDF,ピン配置, 機能
BC846, SBC846, BC847,
SBC847, BC848 Series
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
VCEO
65
45
30
V
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VCBO
80
50
30
V
Emitter-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VEBO
6.0
6.0
5.0
V
Collector Current − Continuous
IC 100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
TJ, Tstg
200
620
−55 to
+150
mW
°C/W
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
3
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
XX MG
G
XX = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 11
1
Publication Order Number:
BC846AWT1/D

1 Page





SBC846 pdf, ピン配列
300
150°C
200
25°C
100 −55°C
BC846, SBC846, BC847, SBC847, BC848 Series
BC846A, BC847A, SBC847A, BC848A
VCE = 1 V
300
150°C
200
25°C
100 −55°C
VCE = 5 V
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
0.18
0.16
IC/IB = 20
0.14
1
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector
Current
1
150°C
0.12 25°C
0.10
0.08
0.06 −55°C
0.04
0.02
0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
0.9 IC/IB = 20
−55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8 25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.1 0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
www.onsemi.com
3


3Pages


SBC846 電子部品, 半導体
BC846, SBC846, BC847, SBC847, BC848 Series
BC846B, SBC846B
2.0 1.0
TA = 25°C
1.6 1.4
20 mA 50 mA 100 mA
200 mA
1.2
0.8 IC =
10 mA
1.8
qVB for VBE
-55°C to 125°C
2.2
0.4 2.6
0
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
IB, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
20
3.0
0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 16. Base−Emitter Temperature Coefficient
40
TA = 25°C
20
Cib
10
6.0
4.0 Cob
2.0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 17. Capacitance
50 100
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0 5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 18. Current−Gain − Bandwidth Product
www.onsemi.com
6

6 Page



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共有リンク

Link :


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SBC846

General Purpose Transistors

ON Semiconductor
ON Semiconductor
SBC846ALT1G

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SBC846BDW1T1G

Dual General Purpose Transistors

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SBC847

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ON Semiconductor


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