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SBC817-40LのメーカーはON Semiconductorです、この部品の機能は「General Purpose Transistors」です。 |
部品番号 | SBC817-40L |
| |
部品説明 | General Purpose Transistors | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとSBC817-40Lダウンロード(pdfファイル)リンクがあります。 Total 10 pages
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
45 V
50 V
5.0 V
500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
6x M G
G
1
6x = Device Code
x = A, B, or C
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 12
http://oneic.com/
1
Publication Order Number:
BC817−16LT1/D
1 Page BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
300
150°C
VCE = 1 V
1
IC/IB = 10
200 25°C
100 −55°C
150°C
25°C
0.1 −55°C
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
0.8
0.7
−55°C
25°C
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8 25°C
0.7
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
1
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http://onsemi.com
3
3Pages BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−25L, SBC81725L
1.0
TJ = 25°C
0.8
0.6
0.4 IC = 10 mA 100 mA 300 mA
500 mA
0.2
0
0.01
0.1 1 10
IB, BASE CURRENT (mA)
Figure 13. Saturation Region
100
+1
qVC for VCE(sat)
0
-1
-2 qVB for VBE
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
100
Cib
10
Cob
1
0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Capacitances
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http://onsemi.com
6
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
SBC817-40L | General Purpose Transistors | ON Semiconductor |