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MJE13005-K の電気的特性と機能

MJE13005-KのメーカーはUnisonic Technologiesです、この部品の機能は「NPN SILICON POWER TRANSISTORS」です。


製品の詳細 ( Datasheet PDF )

部品番号 MJE13005-K
部品説明 NPN SILICON POWER TRANSISTORS
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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MJE13005-K Datasheet, MJE13005-K PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
MJE13005-K
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* VCEO(SUS)= 400 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13005L-K-x-TA3-T
MJE13005G-K-x-TA3-T
MJE13005L-K-x-TM3-T
MJE13005G-K-x-TM3-T
MJE13005L-K-x-TN3-R
MJE13005G-K-x-TN3-R
Package
TO-220
TO-251
TO-252
Pin Assignment
123
BCE
BCE
BCE
Packing
Tube
Tube
Tape Reel
MJE13005L-K-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Free
(1)T: Tube, R: Tape Reel
(2) TA3: TO-220, TM3: TO-251, TN3: TO-252
(3) x: refer to Classification of hFE1
(4) L: Lead Free, G: Halogen Free
MARKING INFORMATION
PACKAGE
TO-220
TO-251
TO-252
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MJE13005-K pdf, ピン配列
MJE13005-K
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS (Note 1)
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10mA , IB=0
Collector Cutoff Current
VCBO=Rated Value,
ICBO
VBE(OFF)=1.5V
VCBO=Rated Value,
VBE(OFF)=1.5V, TC=100°С
Emitter Cutoff Current
IEBO VEB=9V, IC=0
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
IS/B
Clamped Inductive SOA with Base
Reverse Biased
RBSOA
ON CHARACTERISTICS (Note 1)
hFE1 IC=0.5A, VCE=5V
DC Current Gain
hFE2
hFE3
IC=1A, VCE=5V
IC=2A, VCE=5V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=2A, IB=0.5A, Ta=100°С
Base-Emitter Saturation Voltage
IC=1A, IB=0.2A
VBE (SAT) IC=2A, IB=0.5A
IC=2A, IB=0.5A, TC=100°С
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
fT IC=500mA, VCE=10V, f=1MHz
COB VCB=10V, IE=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
Rise Time
tR VCC=125V, IC=2A, IB1=IB2=0.4A,
Storage Time
tS tP=25μs, Duty Cycle1%
Fall Time
tF
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle10%
Note: 2. Pulse Test: PW=300μs, Duty Cycle2%
CLASSIFICATION OF hFE1
MIN
400
15
10
8
4
RANK
RANGE
A
15 ~ 20
B
20 ~ 25
C
25 ~ 30
D
30 ~ 40
TYP MAX UNIT
V
1
mA
5
1 mA
See Fig. 11
See Fig. 12
50
60
40
0.5 V
0.6 V
1V
1V
1.2 V
1.6 V
1.5 V
MHz
65 pF
0.025
0.3
1.7
0.4
0.1
0.7
4
0.9
μs
μs
μs
μs
E
40 ~ 50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13005-K 電子部品, 半導体
MJE13005-K
RESISTIVE SWITCHING PERFORMANCE (Cont.)
NPN SILICON TRANSISTOR
Fig. 6 Forward Bias Power Derating
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL
0.4 DERATING
0.2
0
20 40 60 80 100 120 140 160
Case Temperature, TC С)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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共有リンク

Link :


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