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2SAR542PのメーカーはROHM Semiconductorです、この部品の機能は「Midium Power Transistors」です。 |
部品番号 | 2SAR542P |
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部品説明 | Midium Power Transistors | ||
メーカ | ROHM Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SAR542Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Midium Power Transistors (-30V / -5A)
2SAR542P
Structure
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA)
2) High speed switching
Applications
Driver
Packaging specifications
Package
Type Code
Taping
T100
Basic ordering unit (pieces) 1000
2SAR542P
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
PD *3
Tj
Tstg
-30
-30
-6
-5
-10
0.5
2
150
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
Unit
V
V
V
A
A
W
W
C
C
Dimensions (Unit : mm)
(1) (2) (3)
Abbreviated symbol : MQ
Inner circuit (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
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○c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A
1 Page 2SAR542P
Electrical characteristic curves
-5.0mA
-0.50 -2.5mA
-0.45
-2.0mA
-0.40
-0.35
-0.30
-1.5mA
-0.25
-0.20
-1.0mA
-0.15
-0.10
-0.5mA
-0.05
0.00
0.0
-0.5
-1 -1.5 -2.0
COLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.1 Typical Output Characteristics
Data Sheet
1000
Ta=25°C
1000
VCE = -2V
VCE = -5V
100 -2V
Ta=125°C
100 75°C
25°C
-40°C
10
-1
-10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig.2 DC Current Gain vs.
Collector Current ( Ι )
10
-1
-10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig3. DC Current Gain vs.
Collector Current ( ΙΙ )
-1
Ta=25°C
-0.1
-0.01
IC/IB=50
20
10
-0.001
-1
-10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current ( Ι )
-1 IC/IB=20
-0.1
-0.01
Ta=125°C
75°C
25°C
-40°C
-0.001
-1
-10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( ΙΙ )
-10000
VCE = -2V
Ta=125°C
75°C
-1000
25°C
-40°C
-100
-10
-1
0.3 -0.2 -0.7 -1.2
BASE TO EMITTER VOLTAGE : VBE[V]
Fig.6 Ground Emitter Propagation
Characteristics
1000
100
10
Ta=25°C
Cib f=1MHz
IE=0A
IC=0A
Cob
1000 Ta=25°C
VCE = -10V
100
1
-0.1 -1 -10 -100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
10
10 100 1000
EMITTER CURRENT : IE[mA]
Fig.8 Gain Bandwidth Product vs.
Emitter Current
-100 Single pulse
1ms
-10
10ms
-1 100ms
DC Ta=25°C
-0.1
(Mounted on a
recommended land)
DC Ta=25°C
(Mounted on a ceramic board)
-0.01
-0.1 -1 -10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.9 Safe Operating Area
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○c 2009 ROHM Co., Ltd. All rights reserved.
3/4
2009.12 - Rev.A
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ 2SAR542P データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
2SAR542D | Midium Power Transistors | ROHM Semiconductor |
2SAR542F3 | PNP -3.0A -30V Middle Power Transistor | ROHM Semiconductor |
2SAR542P | Midium Power Transistors | ROHM Semiconductor |