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2SAR552P の電気的特性と機能

2SAR552PのメーカーはROHM Semiconductorです、この部品の機能は「Midium Power Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SAR552P
部品説明 Midium Power Transistors
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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2SAR552P Datasheet, 2SAR552P PDF,ピン配置, 機能
Midium Power Transistors (-30V / -3A)
2SAR552P
Structure
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA)
2) High speed switching
Applications
Driver
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
2SAR552P
Taping
T100
1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
PD *3
Tj
Tstg
-30
-30
-6
-3
-6
0.5
2
150
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
Unit
V
V
V
A
A
W
W
C
C
Dimensions (Unit : mm)
(1) (2) (3)
Abbreviated symbol : MF
Inner circuit (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A

1 Page





2SAR552P pdf, ピン配列
2SAR552P
Electrical characteristic curves
-0.50-5.0mA-3.0mA
-0.45
-2.0mA
-0.40
-0.35
-1.5mA
-0.30
-0.25
-0.20
-1.0mA
-0.15
-0.10
-0.5mA
-0.05
0.00
0.0 -0.5 -1.0 -1.5
-2.0
COLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.1 Typical Output Characteristics
1000
Ta=25°C
VCE = -5V
100 -2V
10
-1
-10
-100
-1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig.2 DC Current Gain vs.
Collector Current ( Ι )
Data Sheet
1000
VCE = -2V
100 Ta=125°C
75°C
25°C
-40°C
10
-1
-10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig3. DC Current Gain vs.
Collector Current ( ΙΙ )
-1
Ta=25°C
-0.1
-0.01
IC/IB=50
20
10
-0.001
-1
-10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current ( Ι )
-1 IC/IB=20
-0.1
-0.01
Ta=125°C
75°C
25°C
-40°C
-0.001
-1
-10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( ΙΙ )
-10000
VCE = -2V
-1000
-100
Ta=125°C
75°C
25°C
-40°C
-10
-1
-0.2 -0.7 -1.2
BASE TO EMITTER VOLTAGE : VBE[V]
Fig.6 Ground Emitter Propagation
Characteristics
1000
100
10
Ta=25°C
f=1MHz
IE=0A
Cib IC=0A
Cob
1000 Ta=25°C
VCE = -10V
100
1
-0.1 -1 -10 -100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
10
10 100 1000
EMITTER CURRENT : IE[mA]
Fig.8 Gain Bandwidth Product vs.
Emitter Current
-10 Single pulse
-1
1ms
10ms
100ms
-0.1 DC Ta=25°C
(Mounted on a
recommended land)
DC Ta=25°C
(Mounted on a ceramic board)
-0.01
-0.1 -1 -10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.9 Safe Operating Area
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
3/4
2009.12 - Rev.A


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共有リンク

Link :


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Midium Power Transistors

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