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VS-63CTQ100-N3 の電気的特性と機能

VS-63CTQ100-N3のメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-63CTQ100-N3
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-63CTQ100-N3 Datasheet, VS-63CTQ100-N3 PDF,ピン配置, 機能
www.vishay.com
VS-63CTQ100PbF, VS-63CTQ100-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
Base
common
cathode
2
TO-220AB
Anode
2 Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2 x 30 A
100 V
0.69 V
20 mA at 125 °C
175 °C
Common cathode
11.25 mJ
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform (per device)
VRRM
IFRM TC = 139 °C (per leg)
IFSM tp = 5 μs sine
VF 30 Apk, TJ = 125 °C
TJ Range
VALUES
60
100
60
1500
0.69
- 65 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-63CTQ100PbF VS-63CTQ100-N3
100 100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Maximum peak one cycle non-repetitive
surge current per leg
IFSM
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TC = 139 °C, rectangular waveform
Rated VR, square wave, 20 kHz, TC = 140 °C
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 0.75 A, L = 40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
30
60
60
1500
300
11.25
0.75
UNITS
A
mJ
A
Revision: 29-Aug-11
1 Document Number: 94245
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-63CTQ100-N3 pdf, ピン配列
www.vishay.com
VS-63CTQ100PbF, VS-63CTQ100-N3
Vishay Semiconductors
1000
100
TJ = 175 °C
TJ = 125 °C
10 TJ = 25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
1000
100
10
1
0.1
0.01
TJ = 175 °C
TJ = 125 °C
TJ = 150 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
0
20 40 60 80 100
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
TJ = 25 °C
100
0
20 40 60 80 100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.001
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
Revision: 29-Aug-11
3 Document Number: 94245
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-63CTQ100-N3 電子部品, 半導体
TO-220AB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
(6)
E
E2 (7)
Q
A
ØP
0.014 M B A M
B
Seating
A plane
A
A1
(6)
H1
(7)
(H1)
(6) D
Detail B
(E)
Thermal pad
D2 (6)
1 23
DD
CC
L1 (2)
D1
1 23
C
E1 (6)
3 x b 3 x b2
Detail B
L
Base metal
(b, b2)
Plating
2x e
e1
0.015 M B A M
Lead tip
cA
A2
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.25 4.65 0.167 0.183
A1 1.14 1.40 0.045 0.055
A2 2.56 2.92 0.101 0.115
b 0.69 1.01 0.027 0.040
b1
0.38 0.97 0.015 0.038
4
b2 1.20 1.73 0.047 0.068
b3
1.14 1.73 0.045 0.068
4
c 0.36 0.61 0.014 0.024
c1
0.36 0.56 0.014 0.022
4
D
14.85 15.25 0.585 0.600
3
D1 8.38 9.02 0.330 0.355
D2 11.68 12.88 0.460 0.507 6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
View A - A
c c1 (4)
b1, b3 (4)
Section C - C and D - D
Conforms to JEDEC outline TO-220AB
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN. MAX.
10.11 10.51
6.86 8.89
- 0.76
2.41 2.67
4.88 5.28
6.09 6.48
13.52 14.02
3.32 3.82
3.54 3.73
2.60 3.00
90° to 93°
INCHES
MIN. MAX.
0.398 0.414
0.270 0.350
- 0.030
0.095 0.105
0.192 0.208
0.240 0.255
0.532 0.552
0.131 0.150
0.139 0.147
0.102 0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
(7) Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
Document Number: 95222 For technical questions within your region, please contact one of the following:
Revision: 08-Mar-11
www.vishay.com
1

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部品番号部品説明メーカ
VS-63CTQ100-N3

Schottky Rectifier ( Diode )

Vishay
Vishay


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