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Número de pieza | VS-6CWT10FN-E | |
Descripción | High Performance Schottky | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de VS-6CWT10FN-E (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! VS-6CUT10-E, VS-6CWT10FN-E
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 3 A
I-PAK (TO-251AA)
Base
common
cathode
4
D-PAK (TO-252AA)
Base
common
cathode
4
13
Anode
2 Anode
Common
cathode
VS-6CUT10-E
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
2
Common
1 cathode 3
Anode
Anode
VS-6CWT10FN-E
D-PAK (TO-252AA),
I-PAK (TO-251AA)
2x3A
100 V
0.63 V
1 mA at 125 °C
175 °C
Common cathode
12 mJ
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Specific for PV cells bypass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VF
3 Apk, TJ = 125 °C (typical, per leg)
TJ Range
VALUES
100
0.6
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL TEST CONDITIONS
VR TJ = 25 °C
VS-6CUT10-E
VS-6CWT10FN-E
100
UNITS
V
Document Number: 94662 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
www.vishay.com
1
1 page VS-6CUT10-E, VS-6CWT10FN-E
High Performance Schottky
Generation 5.0, 2 x 3 A
Vishay Semiconductors
100
10
TJ = 25 °C
1 TJ = 125 °C
TJ = 175 °C
0.1
1
10 100
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
TJ = 25 °C
10
TJ = 125 °C
TJ = 175 °C
1
1 10 100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Document Number: 94662 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
www.vishay.com
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet VS-6CWT10FN-E.PDF ] |
Número de pieza | Descripción | Fabricantes |
VS-6CWT10FN-E | High Performance Schottky | Vishay |
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