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IRF1018EPbF の電気的特性と機能

IRF1018EPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF1018EPbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF1018EPbF Datasheet, IRF1018EPbF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97125
IRF1018EPbF
IRF1018ESPbF
IRF1018ESLPbF
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
7.1m:
G max. 8.4m:
S ID
79A
D
DS
G
TO-220AB
IRF1018EPbF
G
Gate
D
D
DS
G
D2Pak
IRF1018ESPbF
DS
G
TO-262
IRF1018ESLPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw k
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
RθJA
www.irf.com
Junction-to-Case j
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 j
Junction-to-Ambient (PCB Mount) , D2Pak ij
Max.
79
56
315
110
0.76
± 20
21
-55 to + 175
300
10lbxin (1.1Nxm)
88
47
11
Typ.
–––
0.50
–––
–––
Max.
1.32
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
2/28/08

1 Page





IRF1018EPbF pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
10 4.5V
1
0.1
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
60μs PULSE WIDTH
0.1
23456789
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4000
3000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
Coss
Crss
0
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
IRF1018E/S/SLPbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
10
1
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 47A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
16
ID= 47A
12
VDS= 48V
VDS= 30V
VDS= 12V
8
4
0
0 10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3


3Pages


IRF1018EPbF 電子部品, 半導体
IRF1018E/S/SLPbF
4.5
ID = 1.0A
4.0 ID = 1.0mA
ID = 250μA
3.5 ID = 100μA
3.0
14
IF = 32A
12 VR = 51V
TJ = 25°C
10 TJ = 125°C
8
2.5 6
2.0 4
1.5 2
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
14
IF = 47A
12 VR = 51V
TJ = 25°C
10 TJ = 125°C
8
6
4
2
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
320
280
IF = 32A
VR = 51V
240 TJ = 25°C
TJ = 125°C
200
160
120
80
40
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
320
280
IF = 47A
VR = 51V
240 TJ = 25°C
TJ = 125°C
200
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
160
120
80
40
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRF1018EPbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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