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MT110 の電気的特性と機能

MT110のメーカーはTECHSEMです、この部品の機能は「Thyristor Modules」です。


製品の詳細 ( Datasheet PDF )

部品番号 MT110
部品説明 Thyristor Modules
メーカ TECHSEM
ロゴ TECHSEM ロゴ 




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MT110 Datasheet, MT110 PDF,ピン配置, 機能
Features
n Isolated mounting base 2500V~
n Pressure contact technology with
Increased power cycling capability
n Space and weight savings
Typical Applications
n AC/DC Motor drives
n Various rectifiers
n DC supply for PWM inverter
MTC110 MTA110 MTK110 MTX110 MT110
Thyristor Modules
IT(AV)
VDRM/VRRM
ITSM
I2t
110A
600~1800V
2.4A×103
29A2 S*103
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
IT(AV)
IT(RMS)
VDRM
VRRM
IDRM
IRRM
ITSM
I2t
VTO
rT
VTM
dv/dt
Mean on-state current
RMS on-state current
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak current
Surge on-state current
I2T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
Critical rate of rise of off-state voltage
180° half sine wave 50Hz
Single side cooled, Tc=85°C
VDRM&VRRM tp=10ms
VDSM&VRSM= VDRM&VRRM+200V
respectively
at VDRM
at VRRM
10ms half sine wave
VR=60%VRRM
ITM=330A
VDM=67%VDRM
di/dt
Critical rate of rise of on-state current
IGT
VGT
IH
VGD
Rth(j-c)
Rth(c-h)
Viso
Fm
Tstg
Wt
Outline
Gate trigger current
Gate trigger voltage
Holding current
Non-trigger gate voltage
Thermal resistance
Junction to case
Thermal resistance
case to heat sink
Isolation voltage
Thermal connection torque (M5)
Mounting torque (M6)
Stored temperature
W eight
ITM =220A,Gate source 1.5A
tr 0.5μs Repetitive
VA=12V, IA=1A
VDM=67%VDRM
Single side cooled
Single side cooled
50Hz,R.M.S,t=1min,Iiso:1mA(MAX)
217F3/223F3
Tj(°C)
Min
VALUE
Type
Max
UNIT
125 110 A
125 173 A
125 600
1800
V
125 12 mA
2.40
KA
125
29 A2s*103
0.8 V
125
2.29
m
25
1.69
V
125 800 V/μs
125 100 A/μs
30
25 1.0
20
125 0.2
2500
-40
4.0
6.0
160
100
2.5
150
0.250
0.15
125
mA
V
mA
V
°C /W
°C /W
V
N·m
N·m
°C
g
http://www.tech-sem.com
Page 1 of 3

1 Page





MT110 pdf, ピン配列
MTC110 MTA110 MTK110 MTX110 MT110
Surge Cu2rr.4ent Vs.Cycles
2.5
I2t 2V9 s.T2.i4me
35
30
2
25
1.5 20
1
0.5
1
10
Cycles at 50Hz
Fig.7
15
10
5
100 1
Time,m.seconds
Fig.8
10
Gate characteristic at 25°C junction temperature
18
16
14 PGM=100W
12
max.
(100μs pulse)
10
8
6
PG2W
4
min.
2
0
0 4 8 12 16 20
Gate current,IGTA
Fig.9
Gate Trigger Z2o.n5eVa,1t 0v0aMriAes temperature
4
3.5 -30°C
3 -10°C
25°C
2.5
125°C
2
1.5
1
0.5
0
0 30 60 90 120 150
Gate current,IGTmA
Fig.10
180
Outline:
3-M5
217F3
http://www.tech-sem.com
1 23
223F3
Page 3 of 3
3
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共有リンク

Link :


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