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Datasheet GWMTF6619E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GWMTF6619E | TFT MODULE Document No. QR-DE-02/C
SPECIFICATION FOR TFT MODULE
Part No.: Customer: Rev: Issued Date:
GWMTF6619E
E00 2008-08-01
Approved by:
Signature:
Date:
Please sign the cover page of the spec for your approval and return it to us within a month after you receive the spec from Goworld Display. If we do |  Goworld Display | data |
GWM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GWM100-0085X1 | Three phase full Bridge www.DataSheet.co.kr
GWM100-0085X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS ID25 ID90 ID110  IXYS Corporation data | | |
| 2 | GWM100-01X1 | Three phase full Bridge www.DataSheet.co.kr
GWM 100-01X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF IXYS Corporation data | | |
| 3 | GWM120-0075P3 | Six-Pack MOSFET Modules
GWM 120-0075P3
Three phase full bridge
with Trench MOSFETs in DCB isolated high current package
L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 G6 S6 LS5 G5
VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mΩ
Pins Gate
Pow
s er Pin
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25°C TC = IXYS Corporation mosfet | | |
| 4 | GWM120-0075X1 | Three phase full Bridge www.DataSheet.co.kr
GWM 120-0075X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IXYS Corporation data | | |
| 5 | GWM160-0055P3 | Three phase full bridge
GWM 160-0055P3
Three phase full bridge
with Trench MOSFETs in DCB isolated high current package
Preliminary data
L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5
VDSS = 55 V = 160 A ID25 RDSon typ. = 2.3 mΩ
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25°C TC = 90°C T IXYS Corporation data | | |
| 6 | GWM160-0055X1 | Three phase full Bridge www.DataSheet.co.kr
GWM 160-0055X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IXYS Corporation data | | |
| 7 | GWM180-004X2 | Three phase full Bridge www.DataSheet.co.kr
GWM 180-004X2
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
Preliminary data
G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L-
VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW
Straight leads
Surface Mount Device
G2 S2
MOSFETs Symbol VDSS VGS IXYS Corporation data | |
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