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VS-GT300FD060NのメーカーはVishayです、この部品の機能は「DIAP Low Profile 3-Levels Half-Bridge Inverter Stage」です。 |
部品番号 | VS-GT300FD060N |
| |
部品説明 | DIAP Low Profile 3-Levels Half-Bridge Inverter Stage | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとVS-GT300FD060Nダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.vishay.com
VS-GT300FD060N
Vishay Semiconductors
DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A
PRODUCT SUMMARY
VCES
VCE(ON) typical
at IC = 300 A
IC at TC = 25 °C
Package
Circuit
600 V
1.72 V
379 A
DIAP low Profile
Three Levels Half Brigde
Inverter Stage
FEATURES
• Trench plus Field Stop IGBT technology
• FRED Pt® antiparallel and clamping diodes
• Short circuit capability
• Speed 4 kHz to 30 kHz
• Low stray internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATION
• Solar converters
• Uninterruptable power supplies
BENEFITS
• Direct mounting on heatsink
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCE(sat)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature
Storage temperature range
RMS isolation voltage
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
Power dissipation
D5 - D6 CLAMPING DIODE
TJ
TStg
VISOL
VCES
VGES
ICM
ILM
IC
PD
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Repetitive peak reverse voltage
Single pulse forward current
Diode continuous forward current
Power dissipation
D - D2 - D3 - D4 AP DIODE
VRRM
IFSM
IF
PD
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Single pulse forward current
Diode continuous forward current
Power dissipation
IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
IF
TC = 25 °C
TC = 80 °C
PD
TC = 25 °C
TC = 80 °C
Note
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
MAX.
175
- 40 to 175
3500
600
20
650
650
379
288
1250
792
600
800
215
161
500
317
800
215
161
500
317
UNITS
°C
V
A
W
V
A
W
A
W
Revision: 10-Jun-13
1 Document Number: 93569
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Short circuit safe operating area
D5 - D6 CLAMPING DIODE
EON
EOFF
ETOT
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
IC = 300 A
VCC = 300 V
VGE = 15 V
Rg = 22
L = 500 μH
TJ = 125 °C
VGE = 0 V
VCC = 30 V
f = 1 MHz
TJ = 175 °C, IC = 650 A
VCC = 270 V, VP = 600 V
Rg = 22 , VGE = 15 V to 0 V
VCC = 400 V, Vp = 600 V
Rg = 10 , VGE = 15 V to 0 V
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
D1 - D2 - D3 - D4 AP DIODE
trr VR = 200 V
Irr IF = 50 A
Qrr dl/dt = 500 A/μs
trr VR = 200 V
Irr IF = 50 A
Qrr dl/dt = 500 A/μs, TJ = 125 °C
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr VR = 200 V
Irr IF = 50 A
Qrr dl/dt = 500 A/μs
trr VR = 200 V
Irr IF = 50 A
Qrr dl/dt = 500 A/μs, TJ = 125 °C
VS-GT300FD060N
Vishay Semiconductors
- 10.7 -
- 15.6 -
- 26.3 -
- 840 -
- 279 -
- 566 -
- 129 -
- 23.3 -
- 1.7 -
- 0.7 -
mJ
ns
nF
- - 5.0 μs
- 105 -
- 13.5 -
- 712 -
- 166 -
- 24.5 -
- 2050 -
- 105 -
- 13.5 -
- 712 -
- 166 -
- 24.5 -
- 2050 -
ns
A
nC
ns
A
nC
ns
A
nC
ns
A
nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case IGBT thermal resistance (per switch)
Junction to case diode thermal resistance (per diode)
Case to sink, flat, greased surface (per module)
Mounting torque, case to heatsink: M6 screw
Mounting torque, case to terminal: 1, 2, 3, 4: M5 screw
Weight
SYMBOL
RthJC
RthCS
MIN.
-
-
-
4
2
-
TYP.
-
-
0.05
-
-
270
MAX.
0.12
0.3
-
6
4
-
UNITS
°C/W
Nm
g
Revision: 10-Jun-13
3 Document Number: 93569
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages www.vishay.com
17
15
13
11 EOFF
9
7 EON
5
3
1
20 60 100 140 180 220 260 300 340
IC (A)
Fig. 13 - Typical Trench IGBT Energy Loss vs. IC,
TJ = 125 °C, VCC = 300 V, Rg = 22 , VGE = 15 V, L = 500 μH
1000
tf
td(on)
td(off)
100 tr
10
20 60 100 140 180 220 260 300 340
IC (A)
Fig. 14 - Typical IGBT Switching Time vs. IC,
TJ = 125 °C, VCC = 300 V, Rg = 22 , VGE = 15 V, L = 500 μH
32
29
26
23
20
17 EOFF
14
11 EON
8
20 23 26 29 32 35 38 41 44 47 50
Rg (Ω)
Fig. 15 - Typical Trench IGBT Energy Loss vs.Rg,
TJ = 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH
10 000
1000
tr
100
VS-GT300FD060N
Vishay Semiconductors
td(on)
td(off)
tf
10
20 23 26 29 32 35 38 41 44 47 50
Rg (Ω)
Fig. 16 - Typical Trench IGBT Switching Time vs.Rg,
TJ = 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH
1000
100
10
1
0 100 200 300 400 500 600 700
VCE (V)
Fig. 17 - Trench IGBT Reverse Bias SOA
TJ = 175 °C, VGE = 15 V, Rg = 22
240
220
200 TJ = 125 °C
180
160
140
120 TJ = 25 °C
100
80
60
100
200 300 400 500
dIF/dt (A/μs)
Fig. 18 - Typical Diode Reverse Recovery Time vs. dIF/dt,
Vrr = 200 V, IF = 50 A
Revision: 10-Jun-13
6 Document Number: 93569
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
VS-GT300FD060N | DIAP Low Profile 3-Levels Half-Bridge Inverter Stage | Vishay |