DataSheet.es    


PDF VS-EMF050J60U Data sheet ( Hoja de datos )

Número de pieza VS-EMF050J60U
Descripción 3-Levels Half Bridge Inverter Stage
Fabricantes Vishay　
Logotipo Vishay Logotipo



Hay una vista previa y un enlace de descarga de VS-EMF050J60U (archivo pdf) en la parte inferior de esta página.


Total 17 Páginas

No Preview Available ! VS-EMF050J60U Hoja de datos, Descripción, Manual

www.vishay.com
VS-EMF050J60U
Vishay Semiconductors
3-Levels Half Bridge Inverter Stage, 60 A, 57 A
EMIPAK2
PRODUCT SUMMARY
1° LEVEL OF HALF-BRIDGE
VCES
600 V
VCE(ON) typical at IC = 50 A
1.8 V
IC at TC = 98 °C
50 A
2° LEVEL OF HALF-BRIDGE
VCES
VCE(ON) typical at IC = 50 A
IC at TC = 93 °C
Package
900 V
2.73 V
50 A
EMIPAK2
Circuit
Three Levels Half Bridge
Inverter Stage
FEATURES
• Warp1 and Warp2 PFC IGBT
• FRED Pt® and HEXFRED® antiparallel diodes
• FRED Pt® clamping diodes
• Integrated thermistor
• Square RBSOA
• Operating frequency 60 kHz to 150 kHz
• Low internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-EMF050J60U is an integrated solution for a multi level
inverter half-bridge in a single package. The EMIPAK2
package is easy to use thanks to the solderable terminals
and provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Operating junction temperature
Storage temperature range
RMS isolation voltage
Q1 - Q4 IGBT
TJ
TStg
VISOL
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
VCES
VGES
ICM
ILM (1)
Continuous collector current
IC
Power dissipation
Q2 - Q3 IGBT
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
PD
VCES
VGES
ICM
ILM (2)
IC
Power dissipation
PD
TEST CONDITIONS
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
MAX.
150
- 40 to 125
3500
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
600
20
150
150
88
60
338
189
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
900
20
150
150
85
57
338
189
UNITS
°C
V
V
A
A
W
V
A
A
W
Revision: 18-Oct-13
1 Document Number: 93494
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-EMF050J60U pdf
www.vishay.com
VS-EMF050J60U
Vishay Semiconductors
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
D1 - D2 CLAMPING DIODE
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
D3 - D4 AP DIODE
trr VR = 200 V
Irr IF = 30 A
Qrr dl/dt = 500 A/μs
trr VR = 200 V
Irr IF = 30 A
Qrr dl/dt = 500 A/μs, TJ = 125 °C
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
D5 - D6 AP DIODE
trr VR = 400 V
Irr IF = 50 A
Qrr dl/dt = 500 A/μs
trr VR = 400 V
Irr IF = 50 A
Qrr dl/dt = 500 A/μs, TJ = 125 °C
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Note
(1) Energy losses include “tail” and diode reverse recovery.
VR = 200 V
IF = 30 A
dl/dt = 500 A/μs
VR = 200 V
IF = 30 A
dl/dt = 500 A/μs, TJ = 125 °C
MIN. TYP. MAX. UNITS
-
50 80
ns
- 7.5 11 A
-
185 440
nC
-
107 147
ns
- 18 22 A
-
955 1620
nC
-
114 150
ns
- 21 25 A
-
1200 1875
nC
-
170 210
ns
- 28 32 A
-
2160 3360
nC
-
46 77
ns
- 7 11 A
-
161 423
nC
-
106 138
ns
- 17 22 A
-
900 1518
nC
THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Resistance
R25
R100
TJ = 100 °C
4500 5000
468 493
B value
B TJ = 25 °C/TJ = 50 °C
3206 3375
MAX. UNITS
5500
518
3544 K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Q1 - Q4 IGBT - Junction to case thermal resistance (per switch)
Q2 - Q3 IGBT - Junction to case thermal resistance (per switch)
D1 - D2 Clamping diode - Junction to case thermal resistance (per diode)
D3 - D4 AP diode - Junction to case thermal resistance (per diode)
D5 - D6 AP diode - Junction to case thermal resistance (per diode)
Q1 - Q4 IGBT - Case to sink thermal resistance (per switch)
Q2 - Q3 IGBT - Case to sink thermal resistance (per switch)
D1 - D2 Clamping diode - Case to sink thermal resistance (per diode)
D3 - D4 AP diode - Case to sink thermal resistance (per diode)
D5 - D6 AP diode - Case to sink thermal resistance (per diode)
Mounting torque (M4)
Weight
Note
(1) Mounting surface flat, smooth, and greased
SYMBOL
RthJC
RthCS (1)
MIN.
-
-
-
-
-
-
-
-
-
-
2
-
TYP.
-
-
-
-
-
0.31
0.31
0.51
0.41
0.62
-
39
MAX.
0.37
0.37
0.83
0.71
1.3
-
-
-
-
-
3
-
UNITS
°C/W
Nm
g
Revision: 18-Oct-13
5 Document Number: 93494
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5 Page





VS-EMF050J60U arduino
www.vishay.com
VS-EMF050J60U
Vishay Semiconductors
4.2
3.8
3.4
3.0
2.6 Eoff
2.2
1.8
1.4
1.0 Eon
0.6
0.2
10 20 30 40 50 60 70 80 90
93494_28
IC (A)
Fig. 28 - Typical Q2 - Q3 IGBT Energy Loss vs. IC
(with Freewheeling D2 - D3 AP Diode)
VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
280
260
240
220
125 °C
200
180
160
140 25 °C
120
100
100 200 300 400 500
93494_30
dIF/dt (A/μs)
Fig. 30 - Typical D3 - D4 Antiparallel Diode Reverse
Recovery Time vs. dIF/dt
VR = 400 V, IF = 50 A
1000
100
tf
td(on)
td(off)
tr
10
10 20 30 40 50 60 70 80 90
93494_29
IC (A)
Fig. 29 - Typical Q2 - Q3 IGBT Switching Time vs. IC
(with Freewheeling D2 - D3 AP Diode)
TJ = 125 °C, VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
32
28
24
20
125 °C
16
25 °C
12
8
4
100 200 300 400 500
93494_31
dIF/dt (A/μs)
Fig. 31 - Typical D3 - D4 Antiparallel Diode Reverse
Recovery Current vs. dIF/dt
VR = 400 V, IF = 50 A
2500
2250
2000
125 °C
1750
1500
1250
1000
750
25 °C
500
100 200 300 400 500
93494_32
dIF/dt (A/μs)
Fig. 32 - Typical D3 - D4 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt
VR = 400 V, IF = 50 A
Revision: 18-Oct-13
11 Document Number: 93494
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

11 Page







PáginasTotal 17 Páginas
PDF Descargar[ Datasheet VS-EMF050J60U.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
VS-EMF050J60U3-Levels Half Bridge Inverter StageVishay
Vishay

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

 Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

 Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar