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VS-ETF075Y60U の電気的特性と機能

VS-ETF075Y60UのメーカーはVishayです、この部品の機能は「EMIPAK-2B PressFit Power Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-ETF075Y60U
部品説明 EMIPAK-2B PressFit Power Module
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-ETF075Y60U Datasheet, VS-ETF075Y60U PDF,ピン配置, 機能
www.vishay.com
VS-ETF075Y60U
Vishay Semiconductors
EMIPAK-2B PressFit Power Module
3-Levels Half-Bridge Inverter Stage, 75 A
EMIPAK-2B
(package example)
PRODUCT SUMMARY
Q1 - Q4 IGBT STAGE
VCES
600 V
VCE(ON) typical at IC = 75 A
1.7 V
IC at TC = 89 °C
75 A
Q2 - Q3 IGBT STAGE
VCES
VCE(ON) typical at IC = 75 A
IC at TC = 122 °C
Package
600 V
1.56 V
75 A
EMIPAK-2B
Circuit
3-Levels Half Bridge Inverter Stage
FEATURES
• Trench IGBT technology
• FRED Pt® clamping diodes
• PressFit pins technology
• Exposed Al2O3 substrate with low thermal
resistance
• Short circuit rated
• Square RBSOA
• Integrated thermistor
• Operating frequency up to 20 kHz
• Low internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-ETF075Y60U is an integrated solution for a multi level
inverter stage in a single package. The EMIPAK-2B package
is easy to use thanks to the PressFit pins and the exposed
substrate provides improved thermal performance. The
optimized layout also helps to minimize stray parameters,
allowing for better EMI performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Operating junction temperature
Storage temperature range
RMS isolation voltage
Q1 - Q4 IGBT
TJ
TStg
VISOL
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
VCES
VGES
ICM
ILM (1)
Continuous collector current
IC
Power dissipation
Q2 - Q3 IGBT
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
PD
VCES
VGES
ICM
ILM (1)
IC
Power dissipation
PD
TEST CONDITIONS
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
MAX.
175
-40 to 150
3500
600
20
200
200
109
80
40
294
186
600
20
250
250
154
113
50
405
257
UNITS
°C
V
V
A
A
W
V
A
A
W
Revision: 27-Jun-14
1 Document Number: 94685
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-ETF075Y60U pdf, ピン配列
www.vishay.com
VS-ETF075Y60U
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Q2 - Q3 IGBT
Collector to emitter breakdown voltage BVCES
Collector to emitter voltage
VCE(ON)
Gate threshold voltage
Temperature coefficient of threshold
voltage
VGE(th)
VGE(th)/TJ
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 60 A
VGE = 15 V, IC = 75 A
VGE = 15 V, IC = 60 A, TJ = 125 °C
VGE = 15 V, IC = 75 A, TJ = 125 °C
VCE = VGE, IC = 5.6 mA
VCE = VGE, IC = 1.4 mA (25 °C to 125 °C)
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
D5 - D6 CLAMPING DIODE
gfe VCE = 20 V, IC = 75 A
VGE VCE = 20 V, IC = 75 A
ICES
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IGES VGE = ± 20 V, VCE = 0 V
Cathode to anode blocking voltage
Forward voltage drop
Reverse leakage current
D1 - D2 - D3 - D4 AP DIODE
VBR IR = 100 μA
VFM
IF = 40 A
IF = 40 A, TJ = 125 °C
IRM
VR = 600 V
VR = 600 V, TJ = 125 °C
Forward voltage drop
VFM
IF = 30 A
IF = 30 A, TJ = 125 °C
MIN. TYP. MAX. UNITS
600 -
-
- 1.45 1.62
- 1.56 1.73
- 1.52 -
- 1.67 -
3.6 5.3 7.1
V
V
- -18 - mV/°C
- 72 -
S
- 8.3 -
V
- 0.0005 0.1
- 0.065 -
mA
- - ± 400 nA
600 -
-
- 1.83 2.35
- 1.51 -
- 0.0002 0.1
- 0.028 -
V
mA
- 1.2 1.41
V
- 1.06 -
Revision: 27-Jun-14
3 Document Number: 94685
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-ETF075Y60U 電子部品, 半導体
www.vishay.com
150
135 TJ = 25 °C
120
105
90 TJ = 125 °C
75 TJ = 150 °C
TJ = 175 °C
60
45
30
15
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
Fig. 1 - Typical Q1 - Q4 Trench IGBT Output Characteristics
VGE = 15 V
150
135
120
105
90 VGE = 18 V
VGE = 15 V
75 VGE = 12 V
60
45
30 VGE = 9 V
15
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
Fig. 2 - Typical Q1 - Q4 Trench IGBT Output Characteristics
TJ = 125 °C
180
160
140
120
100 DC
80
60
40
20
0
0 20 40 60 80 100 120
IC - Continuous Collector Current (A)
Fig. 3 - Maximum Q1 - Q4 Trench IGBT Continuous Collector
Current vs. Case Temperature
VS-ETF075Y60U
Vishay Semiconductors
80
VCE = 20 V
70
60
50
40 TJ = 125 °C
30
20 TJ = 25 °C
10
0
4 5 6 7 8 9 10 11 12
VGE (V)
Fig. 4 - Typical Q1 - Q4 Trench IGBT Transfer Characteristics
6.5
6
TJ = 25 °C
5.5
5
4.5 TJ = 125 °C
4
3.5
3
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
IC (mA)
Fig. 5 - Typical Q1 - Q4 Trench IGBT Gate Threshold Voltage
10
1
0.1
0.01
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
0.001
0.0001
TJ = 25 °C
0.00001
100 200 300 400 500 600
VCES (V)
Fig. 6 - Typical Q1 - Q4 Trench IGBT Zero Gate Voltage
Collector Current
Revision: 27-Jun-14
6 Document Number: 94685
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-ETF075Y60U

EMIPAK-2B PressFit Power Module

Vishay
Vishay


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