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PDF VS-ENQ030L120S Data sheet ( Hoja de datos )
| Número de pieza | VS-ENQ030L120S | |
| Descripción | EMIPAK-1B PressFit Power Module | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-ENQ030L120S
Vishay Semiconductors
EMIPAK-1B PressFit Power Module
Neutral Point Clamp Topology, 30 A
EMIPAK-1B
(package example)
PRODUCT SUMMARY
TRENCH IGBT 1200 V STAGE
VCES
1200 V
VCE(ON) typical at IC = 30 A
2.12 V
IC at TC = 102 °C
30 A
TRENCH IGBT 600 V STAGE
VCES
VCE(ON) typical at IC = 30 A
IC at TC = 106 °C
Package
600 V
1.42 V
30 A
EMIPAK-1B
Circuit
3-Levels Neutral Point Clamp Topology
FEATURES
• Ultrafast Trench IGBT technology
• HEXFRED® and silicon carbide diode technology
• PressFit pins technology
• Exposed Al2O3 substrate with low thermal
resistance
• Operating frequency up to 20 kHz
• Low internal inductances
• UL pending
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-ENQ030L120S is an integrated solution for a neutral
point clamp topology in a single package. The EMIPAK-1B
package is easy to use thanks to the PressFit pins and the
exposed substrate provides improved thermal performance.
The optimized layout also helps to minimize stray
parameters, allowing for better EMI performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Operating junction temperature
Storage temperature range
RMS isolation voltage
Q1 - Q4 TRENCH IGBT 1200 V
TJ
TStg
VISOL
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
VCES
VGES
ICM
ILM (1)
Continuous drain current
IC
Power dissipation
Q2 - Q3 TRENCH IGBT 600 V
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
PD
VCES
VGES
ICM
ILM (2)
IC
Power dissipation
PD
TEST CONDITIONS
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
MAX.
150
- 40 to 150
3500
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
1200
± 30
120
120
61
40
21
216
121
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
600
± 20
130
130
64
42
25
174
97
UNITS
°C
V
V
A
A
W
V
A
A
W
Revision: 27-Jun-14
1 Document Number: 94684
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
60
55
50
45
40
35
30
25
20
15
10
5
0
0
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE (V)
Fig. 1 - Typical Q1 - Q4 Trench IGBT 1200 V
Output Characteristics VGE = 15 V
60
55
50
45
40
35
30
25
20
15
10
5
0
0
VGE = 9 V
VGE = 12 V
VGE = 15 V
VGE = 18 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE (V)
Fig. 2 - Typical Q1 - Q4 Trench IGBT 1200 V
Output Characteristics TJ = 125 °C
160
140
120
DC
100
80
60
40
20
0
0 10 20 30 40 50 60 70
IC - Continuous Collector Current (A)
Fig. 3 - Maximum Q1 - Q4 Trench IGBT 1200 V
Continuous Collector Current vs. Case Temperature
VS-ENQ030L120S
Vishay Semiconductors
60
55
50
45
40
35
30
25
20
15
10
5
0
4.0
VCE = 20 V
TJ = 125 °C
TJ = 25 °C
5.0 6.0 7.0 8.0 9.0
VGE (V)
Fig. 4 - Typical Q1 - Q4 Trench IGBT 1200 V
Transfer Characteristics
5.5
5.0
TJ = 25 °C
4.5
4.0
3.5 TJ = 125 °C
3.0
2.5
2.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IC (mA)
Fig. 5 - Typical Q1 - Q4 Trench IGBT 1200 V
Gate Threshold Voltage
10
TJ = 150 °C
1 TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001
100 200 300 400 500 600 700 800 900 1000 1100 1200
VCES (V)
Fig. 6 - Typical Q1 - Q4 Trench IGBT 1200 V
Zero Gate Voltage Collector Current
Revision: 27-Jun-14
5 Document Number: 94684
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
VS-ENQ030L120S
Vishay Semiconductors
10
1
0.1
D = 0.5
D = 0.2
D = 0.1
0.01 D = 0.05
D = 0.02
D = 0.01
0.001
DC
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 33 - Maximum Thermal Impedance ZthJC Characteristics (Q2 - Q3 Trench IGBT 600 V)
10
1
D = 0.5
D = 0.2
0.1 D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 34 - Maximum Thermal Impedance ZthJC Characteristics (D2 - D3 Antiparallel Diode)
ORDERING INFORMATION TABLE
Device code VS- EN Q 030 L 120 S
1 2 3 4567
1 - Vishay Semiconductors product
2 - Package indicator (EN = EMIPAK-1B)
3 - Circuit configuration (Q = Neutral point clamp topology)
4 - Current rating (030 = 30 A)
5 - Switch die technology (L = Ultrafast Trench IGBT 1200 V and Trench IGBT 600 V)
6 - Voltage rating (120 = 1200 V)
7 - Diode die technology (S = SiC diode)
Revision: 27-Jun-14
11 Document Number: 94684
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet VS-ENQ030L120S.PDF ] | |
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