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VS-20MT120UFAPbF の電気的特性と機能

VS-20MT120UFAPbFのメーカーはVishayです、この部品の機能は「IGBT MTP」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-20MT120UFAPbF
部品説明 IGBT MTP
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-20MT120UFAPbF Datasheet, VS-20MT120UFAPbF PDF,ピン配置, 機能
www.vishay.com
VS-20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A
MTP
PRODUCT SUMMARY
VCES
IC at TC = 96 °C
VCE(on) (typical)
at IC = 20 A, 25 °C
Package
Circuit
1200 V
20 A
3.29 V
MTP
Full bridge
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive VCE(on) temperature coefficient
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Low diode VF
• Square RBSOA
• Al2O3 DBC substrate
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
VCES
Continuous collector current
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode maximum forward current
IFM
Gate to emitter voltage
VGE
RMS isolation voltage
VISOL
Maximum power dissipation (only IGBT)
PD
Operating junction temperature range
TJ
TEST CONDITIONS
TC = 96 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
1200
20
100
100
100
± 20
2500
240
96
-40 to +150
UNITS
V
A
V
W
°C
Revision: 30-Oct-13
1 Document Number: 94470
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-20MT120UFAPbF pdf, ピン配列
www.vishay.com
VS-20MT120UFAPbF
Vishay Semiconductors
DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Diode forward voltage drop
VFM
Reverse recovery energy of the diode
Diode reverse recovery time
Peak reverse recovery current
Erec
trr
Irr
IC = 20 A
IC = 40 A
IC = 20 A, TJ = 125 °C
IC = 40 A, TJ = 125 °C
IC = 20 A, TJ = 150 °C
VGE = 15 V, Rg = 5 , L = 200 μH
VCC = 600 V, IC = 20 A
TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
2.48
3.28
2.44
3.45
2.21
420
98
33
MAX. UNITS
2.94
3.90
2.84 V
4.14
2.93
630 μJ
150 ns
50 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNITS
Operating junction temperature range
Storage temperature range
Junction to case
IGBT
Diode
TJ
TStg
RthJC
- 40 - 150
°C
- 40 - 125
- 0.53 0.64
- 0.69 0.83 °C/W
Case to sink per module
Clearance
Creepage
Mounting torque
RthCS
Heatsink compound thermal conductivity = 1 W/mK
External shortest distance in air between 2 terminals
Shortest distance along external surface of the
insulating material between 2 terminals
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
- 0.06
5.5 -
8-
3 ± 10 %
-
-
-
mm
Nm
Weight
66 g
Revision: 30-Oct-13
3 Document Number: 94470
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-20MT120UFAPbF 電子部品, 半導体
www.vishay.com
VS-20MT120UFAPbF
Vishay Semiconductors
2400
2000
1600
EON
1200
800
EOFF
400
0
0 10 20 30 40 50
IC (A)
Fig. 13 - Typical Energy Loss vs. IC
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
Rg = 5 ; VGE = 15 V
1000
tdOFF
tF
100
tdON
tR
10
0
10 20 30 40
50 60
RG (Ω)
Fig. 16 - Typical Switching Time vs. Rg
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
ICE = 5.0A; VGE = 15 V
1000
tdOFF
100 tF
tdON
tR
10
0
10 20 30 40 50
IC (A)
Fig. 14 - Typical Switching Time vs. IC
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
Rg = 100 ; VGE = 15 V
40
RG = 5.0Ω
30 RG =10 Ω
20 RG =30 Ω
RG =50 Ω
10
0
0 5 10 15 20 25 30 35
IF (A)
Fig. 17 - Typical Diode Irr vs. IF
TJ = 150 °C
2000
40
1600
1200
800
400
EON
EOFF
30
20
10
0
0
10 20 30 40 50 60
RG (Ω)
Fig. 15 - Typical Energy Loss vs. Rg
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
ICE = 5.0A; VGE = 15 V
0
0 10 20 30 40 50 60
RG (Ω)
Fig. 18 - Typical Diode Irr vs. Rg
TJ = 150 °C; IF = 5.0 A
Revision: 30-Oct-13
6 Document Number: 94470
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-20MT120UFAPbF

IGBT MTP

Vishay
Vishay


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