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PDF VS-GB400TH120U Data sheet ( Hoja de datos )

Número de pieza VS-GB400TH120U
Descripción Molding Type Module IGBT
Fabricantes Vishay 
Logotipo Vishay Logotipo



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www.vishay.com
VS-GB400TH120U
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V and 400 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 400 A, TJ = 25 °C
Package
Circuit
1200 V
400 A
3.10 V
Double INT-A-PAK
Half bridge
FEATURES
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• VCE(on) with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inductive heating
• Switching mode power supplies
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
VCES
VGES
IC
ICM (1)
IF
IFM (1)
TC = 25 °C
TC = 80 °C
tp = 1 ms
TC = 80 °C
tp = 1 ms
Maximum power dissipation
PD TJ = 150 °C
Short circuit withstand time
TSC TJ = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
1200
± 20
660
400
800
400
800
2660
10
2500
UNITS
V
A
W
μs
V
Revision: 03-Jul-14
1 Document Number: 94789
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-GB400TH120U pdf
www.vishay.com
VS-GB400TH120U
Vishay Semiconductors
30
25
20
Erec
15
10
5
0
0
VCC = 600 V
IC = 400 A
VGE = - 15 V
TJ = 125 °C
5
10
15
Rg (Ω)
20
Fig. 9 - Diode Switching Loss vs. Rg
25
100
10-1 DIODE
10-2
10-3
10-3
10-2
10-1
100
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
1
2
6
7
3
5
4
101
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95538
Revision: 03-Jul-14
5 Document Number: 94789
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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