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PDF VS-GB300TH120N Data sheet ( Hoja de datos )
| Número de pieza | VS-GB300TH120N | |
| Descripción | Molding Type Module IGBT | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-GB300TH120N
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 1200 V and 300 A
Double INT-A-PAK
FEATURES
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 300 A, 25 °C
Package
Circuit
1200 V
300 A
2.00 V
Double INT-A-PAK
Half bridge
TYPICAL APPLICATIONS
• UPS
• Inverter for motor drive
• AC and DC servo drive amplifier
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
Collector current
TC = 25 °C
IC
TC = 80 °C
Pulsed collector current
ICM (1)
tp = 1 ms
Diode continuous forward current
IF TC = 80 °C
Diode maximum forward current
IFM tp = 1 ms
Maximum power dissipation
PD TJ = 150 °C
Short circuit withstand time
tSC TJ = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
1200
± 20
500
300
600
300
600
1645
10
2500
UNITS
V
A
W
μs
V
Revision: 03-Jul-14
1 Document Number: 94750
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GB300TH120N
Vishay Semiconductors
25
20
15 Erec
10
VCC = 600 V
5 IF = 300 A
VGE = - 15 V
TJ = 125 °C
0
0 10 20 30 40 50
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Gate Resistance Rg
1
0.1
Diode
0.01
0.001
0.001
CIRCUIT CONFIGURATION
0.01 0.1
1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
12
6
7
3
5
4
10
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95525
Revision: 03-Jul-14
5 Document Number: 94750
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VS-GB300TH120N.PDF ] | |
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