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PDF VS-GT100TP60N Data sheet ( Hoja de datos )
| Número de pieza | VS-GT100TP60N | |
| Descripción | Half Bridge IGBT Power Module | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-GT100TP60N
Vishay Semiconductors
Half Bridge IGBT Power Module, 600 V, 100 A
INT-A-PAK
FEATURES
• Low VCE(on) trench IGBT technology
• 5 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 100 A, 25 °C
600 V
100 A
1.65 V
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
VCES
VGES
IC
ICM (1)
IF
IFM (1)
TC = 25 °C
TC = 80 °C
tp = 1 ms
TC = 80 °C
tp = 1 ms
Maximum power dissipation
PD TJ = 175 °C
Short circuit withstand time
tSC TC = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
600
± 20
160
100
200
100
200
417
5
4000
UNITS
V
A
W
μs
V
Revision: 17-Sep-12
1 Document Number: 93799
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GT100TP60N
Vishay Semiconductors
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
EREC
VCC = 300 V
IF = 100 A
VGE = - 15 V
TJ = 125 °C
10 20
30
40
RG (Ω)
Fig. 9 - Diode Switching Loss vs. RG
50
1
Diode
0.1
0.01
0.001
CIRCUIT CONFIGURATION
0.01 0.1
t (s)
Fig. 10 - Forward Characteristics of Diode
1
12
6
7
3
5
4
10
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95524
Revision: 17-Sep-12
5 Document Number: 93799
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VS-GT100TP60N.PDF ] | |
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