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VS-GB150TS60NPbFのメーカーはVishayです、この部品の機能は「Ultrafast Speed IGBT」です。 |
部品番号 | VS-GB150TS60NPbF |
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部品説明 | Ultrafast Speed IGBT | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとVS-GB150TS60NPbFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.vishay.com
VS-GB150TS60NPbF
Vishay Semiconductors
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 138 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 150 A, 25 °C
Package
Circuit
600 V
138 A
2.64 V
INT-A-PAK
Half bridge
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Maximum power dissipation
Isolation voltage
Operating junction temperature range
Storage temperature range
VCES
IC
ICM
ILM
IF
VGE
PD
VISOL
TJ
TStg
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
138
93
300
300
178
121
± 20
500
280
2500
-40 to +150
-40 to +150
UNITS
V
A
V
W
V
°C
Revision: 29-Apr-14
1 Document Number: 94502
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction and storage temperature range
Junction to case per leg
IGBT
Diode
TJ, TStg
RthJC
Case to sink per module
Mounting torque
case to heatsink
case to terminal 1, 2, 3
RthCS
Weight
MIN.
- 40
-
-
-
-
-
-
VS-GB150TS60NPbF
Vishay Semiconductors
TYP.
-
0.17
0.19
0.1
-
-
185
MAX.
150
0.25
0.32
-
4
3
-
UNITS
°C
°C/W
Nm
g
200
Vge = 18V
Vge = 15V
Vge = 12V
150
100
Vge = 9V
50
0
01234
VCE (V)
Fig. 1 - Typical IGBT Output Characteristics
TJ = 25 °C, tp = 500 μs
200
Vge = 18V
Vge = 15V
Vge = 12V
150
Vge = 9V
100
50
0
012345
VCE (V)
Fig. 2 - Typical IGBT Output Characteristics
TJ = 125 °C, tp = 500 μs
200
180
160
140
120
100
80
60
40 Tj = 125°C
20 Tj = 25°C
0
012345678
VGE (V)
Fig. 3 - Typical Transfer Characteristics
VCE = 20 V, tp = 500 μs
4.5
4
Ic = 200A
3.5
Ic = 150A
3
2.5 Ic = 75A
2
1.5
0
30 60 90 120
TJ, Junction Temperature (°C)
150
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
VGE = 15 V, 500 μs pulse width
Revision: 29-Apr-14
3 Document Number: 94502
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages www.vishay.com
VS-GB150TS60NPbF
Vishay Semiconductors
1
0.1
0.01
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t1 , Rectangular Pulse Duration (sec)
Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
1
D = 0.5
0.1
0.01
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t1 , Rectangular Pulse Duration (sec)
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED®)
Revision: 29-Apr-14
6 Document Number: 94502
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
VS-GB150TS60NPbF | Ultrafast Speed IGBT | Vishay |