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VS-70MT060WHTAPbF の電気的特性と機能

VS-70MT060WHTAPbFのメーカーはVishayです、この部品の機能は「IGBT MTP」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-70MT060WHTAPbF
部品説明 IGBT MTP
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-70MT060WHTAPbF Datasheet, VS-70MT060WHTAPbF PDF,ピン配置, 機能
www.vishay.com
VS-70MT060WHTAPbF
Vishay Semiconductors
“Half Bridge” IGBT MTP (Warp 2 Speed IGBT), 70 A
MTP
PRODUCT SUMMARY
VCES
VCE(on) typical at VGE = 15 V
IC at TC = 78 °C
Package
Circuit
600 V
2.1 V
70 A
MTP
Half bridge
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• SMD thermistor (NTC)
• Al2O3 BDC
• Very low stay inductance design for high speed operation
• UL pending
• Speed 60 kHz to 150 kHz
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Lower coduction losses and switching losses
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
IF
IFM
VGE
VISOL
Maximum power dissipation, IGBT
PD
TEST CONDITIONS
TC = 25 °C
TC = 78 °C
TC = 78 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
600
100
70
300
300
53
200
± 20
2500
347
139
UNITS
V
A
V
W
Revision: 30-Oct-13
1 Document Number: 94469
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-70MT060WHTAPbF pdf, ピン配列
www.vishay.com
VS-70MT060WHTAPbF
Vishay Semiconductors
THERMISTOR SPECIFICATIONS
PARAMETER
SYMBOL
Resistance
Sensitivity index of the
thermistor material
R0 (1)
(1)(2)
Notes
(1) T0, T1 are thermistor´s temperatures
(2)
R----0- =
R1
exp
--1---
T0
-T-1--1-
, temperature in Kelvin
T0 = 25 °C
T0 = 25 °C
T1 = 85 °C
TEST CONDITIONS
DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Diode forward voltage drop
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
IC = 70 A, VGE = 0 V
VFM IC = 140 A, VGE = 0 V
IC = 70 A, VGE = 0 V, TJ = 150 °C
trr
Irr
VCC = 200 V, IC = 70 A
dI/dt = 200 A/μs
Qrr
trr VCC = 200 V, IC = 70 A
Irr dI/dt = 200 A/μs
Qrr TJ = 125 °C
MIN.
-
TYP. MAX. UNITS
30 - k
- 4000 -
K
MIN.
-
-
-
-
-
-
-
-
-
TYP.
1.64
2.1
1.69
96
9.4
440
140
14
950
MAX. UNITS
2.1
2.4 V
1.9
126 ns
12.8 A
750 nC
194 ns
19 A
1700 nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction
temperature range
IGBT,
Diode
Thermistor
TJ
Storage temperature range
Junction to case
IGBT
Diode
TStg
RthJC
Case to sink per module
Mounting torque to heatsink
Weight
RthCS
Heatsink compound thermal conductivity = 1 W/mK
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
MIN. TYP. MAX. UNITS
- 40 - 150
- 40 - 125 °C
- 40 - 125
- - 0.36
- - 0.8 °C/W
- 0.06 -
3 ± 10 %
Nm
66 g
Revision: 30-Oct-13
3 Document Number: 94469
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-70MT060WHTAPbF 電子部品, 半導体
www.vishay.com
VS-70MT060WHTAPbF
Vishay Semiconductors
2000
1800
VR = 200 V
1600
1400
1200
IF = 70 A, 125 °C
1000
800 IF = 70 A, 25 °C
600
400
200
100
1000
94469_13
dIF/dt (A/μs)
Fig. 13 - Typical Stored Charge vs. dIF/dt
1
0.1
0.01
0.001
0.00001
94469_14
1.0
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
1.0
Fig. 14 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
10
0.1
0.01
0.001
0.00001
94469_15
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
1.0
Revision: 30-Oct-13
6 Document Number: 94469
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-70MT060WHTAPbF

IGBT MTP

Vishay
Vishay


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