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PDF VS-GB70LA60UF Data sheet ( Hoja de datos )
| Número de pieza | VS-GB70LA60UF | |
| Descripción | IGBT | |
| Fabricantes | Vishay | |
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www.vishay.com
VS-GB70LA60UF
Vishay Semiconductors
"Low Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 70 A, 25 °C
IF DC
Package
Circuit
600 V
70 A at 88 °C
2.23 V
70 A at 86 °C
SOT-227
Chopper low side switch
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• Low VCE(on)
• FRED Pt® hyperfast rectifier
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
VCES
IC
ICM
ILM
IF
IFM
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
111
76
120
120
113
75
200
± 20
447
250
236
132
2500
UNITS
V
A
V
W
V
Revision: 02-Aug-13
1 Document Number: 93104
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GB70LA60UF
Vishay Semiconductors
170
145
TJ = 125 °C
120
95
70 TJ = 25 °C
45
20
100
1000
dIF/dt (A/µs)
Fig. 11 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
30
25
20
TJ = 125 °C
15
10
5 TJ = 25 °C
0
100
1000
dIF/dt (A/µs)
Fig. 12 - Typical Irr Diode vs. dIF/dt
VRR = 200 V, IF = 50 A
1250
1050
850
TJ = 125 °C
650
450
250 TJ = 25 °C
50
100
1000
dIF/dt (A/µs)
Fig. 13 - Typical Qrr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
1
0.1
0.01
0.001
0.00001
D = 0.50
D = 0.20
DC
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
10
Fig. 14 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
100
Revision: 02-Aug-13
5 Document Number: 93104
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VS-GB70LA60UF.PDF ] | |
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