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PDF VS-GA200SA60UP Data sheet ( Hoja de datos )
| Número de pieza | VS-GA200SA60UP | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-GA200SA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
VCE(on) (typical)
VGE
IC
Package
Circuit
600 V
1.92 V
15 V
100 A
SOT-227
Single Switch no Diode
FEATURES
• Ultrafast: Optimized for minimum saturation
voltage and speed up to 40 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package (2500 VAC/RMS)
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
VCES
Continuous collector current
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Gate to emitter voltage
Reverse voltage avalanche energy
RMS isolation voltage
Maximum power dissipation
Operating junction and storage
temperature range
Mounting torque
VGE
EARV
VISOL
PD
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
VCC = 80 % (VCES), VGE = 20 V,
L = 10 μH, RG = 2.0 ,
See fig. 13a
Repetitive rating; pulse width limited
by maximum junction temperature
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 100 °C
6-32 or M3 screw
MAX.
600
200
100
400
400
± 20
160
2500
500
200
- 55 to + 150
1.3 (12)
UNITS
V
A
V
mJ
V
W
°C
Nm
(lbf in)
Revision: 13-Sep-13
1 Document Number: 94364
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
60
RG = 2.0 Ω
50
TJ = 150 °C
VCC = 480 V
VGE = 15 V
40
30
20
10
0
0 100 200 300 400
IC - Collector Current (A)
Fig. 11 - Typical Switching Losses vs. Collector Current
1000
VGE = 20 V
TJ = 125 °C
100
Safe operating area
10
1
10
100
1000
VCE - Collector to Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
VS-GA200SA60UP
Vishay Semiconductors
50 V
1000 V
L
VC*
D.U.T.
1
2
* Driver same type as D.U.T.; VC = 80 % of VCE (max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated Id
Fig. 13a - Clamped Inductive Load Test Circuit
0 V to 480 V
480 µF
960 V
RL =
480 V
4 x IC at 25 °C
Fig. 13b - Pulsed Collector Current Test Circuit
50 V
L
Driver*
1000 V
1
2
VC
IC
D.U.T.
3
* Driver same type
as D.U.T., VC = 480 V
Fig. 14a - Switching Loss Test Circuit
1
2
3
VC 90 %
10 %
5%
IC
10 %
90 %
td(off)
td(on)
tr
Eon
tf
Eoff
Ets = (Eon + Eoff)
Fig. 14b - Switching Loss Waveforms
t = 5 µs
Revision: 13-Sep-13
5 Document Number: 94364
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet VS-GA200SA60UP.PDF ] | |
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